Electronic charges, transport across

Niu S and Mauzerall D 1996 Fast and efficient charge transport across a lipid bilayer is electronically mediated by Cyf, fullerene aggregates J. Am. Chem. Soc. 118 5791-5... 

There is need to distinguish more generally between those processes in which charge transport across interfaces is driven by electron exchange and those in which ions and charge-bearing particles are transferred. 

The abihty to measure and to control charge transport across nanometer-scale metal-molecule-metal junctions represents a key step toward the realization of molecular-based electronics [190-192]. Various experimental approaches have been employed to study molecular junctions in two- and three-terminal configurations. These include scanning probe microscopies (STM, STS, CP-AFM) [193-208], crossed-wire junctions [209], mechanical [210-215] and electromigration [216,217] break junctions, nanopores [218] and mercury drop electrodes [219]. Approaches in condensed media, and in par-... 

This chapter discusses the use of carbon-based electrode materials in the construction of MJs and the use of carbon-based materials in related studies (such as electrochemical experiments and in the construction of other electronic devices). The methods for making MJs are first outlined, followed by the use of the more novel allotropes of carbon. These materials have interesting electronic properties that provide additional opportunities for their application in molecular electronics relative to more conventional carbon materials. Finally, some ofthe considerations that dictate charge transport across molecular layers in MJs are discussed before we leave with some future prospects. 

As discussed earlier, electrochemical rate constant measurements provide one platform upon which to evaluate charge transport across molecules. However, the electrochemical system contains a lot of complexity, including the presence of ions (i.e., the impact of the electrical double layer cannot be ignored), and relies on electron transfer reactions that may or may not be straightforward to probe the... 

In an HBT the charge carriers from an emitter layer are transported across a thin base layer and coUected by a third layer called the coUector. A small base current is present which iacludes the carriers that did not successfully cross the base layer from the emitter to the coUector. The FET is a unipolar device making use of a single charge carrier in each device, either electrons or holes. The HBT is a bipolar device, using both electrons and holes in each device. The emitter and coUector layers are doped the same polarity n- or -type), with the base being the opposite polarity (p- or n-ty- e). An HBT with a n-ty e emitter is referred to as a n—p—n device ap—n—p device has a -type emitter. The n—p—n transistors are typicaUy faster and have been the focus of more research. For the sake of simplicity, the foUowing discussion wiU focus on n—p—n transistors. 

In accordance with Ohm s law, if we were to double the intensity X of the electric field, the current would be doubled that is to say, the plane CD would have to be placed at twice the distance from AB. If the number of conduction electrons per unit volume is p, and the distance between the planes CD and AB is denoted by v, we have n = pv, since we are discussing the unit area. Hence the net resultant charge transported in unit time across AB, that is, the current density, is given by... 

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