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Electron detection

Figure Bl.6.12 Ionization-energy spectrum of carbonyl sulphide obtained by dipole (e, 2e) spectroscopy [18], The incident-electron energy was 3.5 keV, the scattered incident electron was detected in the forward direction and the ejected (ionized) electron detected in coincidence at 54.7° (angular anisotropies cancel at this magic angle ). The energy of the two outgoing electrons was scaimed keeping the net energy loss fixed at 40 eV so that the spectrum is essentially identical to the 40 eV photoabsorption spectrum. Peaks are identified with ionization of valence electrons from the indicated molecular orbitals. Figure Bl.6.12 Ionization-energy spectrum of carbonyl sulphide obtained by dipole (e, 2e) spectroscopy [18], The incident-electron energy was 3.5 keV, the scattered incident electron was detected in the forward direction and the ejected (ionized) electron detected in coincidence at 54.7° (angular anisotropies cancel at this magic angle ). The energy of the two outgoing electrons was scaimed keeping the net energy loss fixed at 40 eV so that the spectrum is essentially identical to the 40 eV photoabsorption spectrum. Peaks are identified with ionization of valence electrons from the indicated molecular orbitals.
Electron Beam Techniques. One of the most powerful tools in VLSI technology is the scanning electron microscope (sem) (see Microscopy). A sem is typically used in three modes secondary electron detection, back-scattered electron detection, and x-ray fluorescence (xrf). AH three techniques can be used for nondestmctive analysis of a VLSI wafer, where the sample does not have to be destroyed for sample preparation or by analysis, if the sem is equipped to accept large wafer-sized samples and the electron beam is used at low (ca 1 keV) energy to preserve the functional integrity of the circuitry. Samples that do not diffuse the charge produced by the electron beam, such as insulators, require special sample preparation. [Pg.356]


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See also in sourсe #XX -- [ Pg.254 ]

See also in sourсe #XX -- [ Pg.103 ]




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63Ni detection, electron capture

Analysis electron capture detection

Detection Techniques and Electronic Equipment

Detection by electron paramagnetic

Detection by electron paramagnetic resonance

Detection by electron spin resonance

Detection limit electron capture

Detection limit, electrons

Detection methods electron capture detector

Detection methods electron paramagnetic spin resonance

Direct electron spin resonance, radical intermediate detection

EXPLOSIVES DETECTION USING ULTRASENSITIVE ELECTRONIC VAPOR SENSORS FIELD EXPERIENCE

Echo-detected electron spin resonance

Electron capture detection

Electron capture detection for

Electron detectable elements

Electron mediator-free detection

Electron paramagnetic resonance detection

Electron paramagnetic resonance radical detection

Electron paramagnetic resonance spectroscopy, detection

Electron spin resonance detection-observation

Electron-capture detection, assignment

Electron-capture detection, separation

Electronic Spectral Detection

Electronic detection-based microarrays

Electronic detection-based microarrays fabrication

Electronic detection-based microarrays for ceramic or plastic substrate

Electronic detection-based microarrays of nanoarray biochips

Electronic imagers detection

Electronic signal detection

Explosives, electron-capture detection

Fluorescence detection electron excitation

GC-electron capture detection

Gas chromatography electron capture detection

High electron mobility detection

Light-Induced Electron-Spin Resonance Detection of the Charge Transfer Process

Other Electron-detecting Techniques

Photoinduced absorption-detected electron

Pulse electron paramagnetic resonance detection

The Electronic Detection System

Total electron yield detection

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