Electron detection

Figure Bl.6.12 Ionization-energy spectrum of carbonyl sulphide obtained by dipole (e, 2e) spectroscopy [18], The incident-electron energy was 3.5 keV, the scattered incident electron was detected in the forward direction and the ejected (ionized) electron detected in coincidence at 54.7° (angular anisotropies cancel at this magic angle ). The energy of the two outgoing electrons was scaimed keeping the net energy loss fixed at 40 eV so that the spectrum is essentially identical to the 40 eV photoabsorption spectrum. Peaks are identified with ionization of valence electrons from the indicated molecular orbitals.

Electron Beam Techniques. One of the most powerful tools in VLSI technology is the scanning electron microscope (sem) (see Microscopy). A sem is typically used in three modes secondary electron detection, back-scattered electron detection, and x-ray fluorescence (xrf). AH three techniques can be used for nondestmctive analysis of a VLSI wafer, where the sample does not have to be destroyed for sample preparation or by analysis, if the sem is equipped to accept large wafer-sized samples and the electron beam is used at low (ca 1 keV) energy to preserve the functional integrity of the circuitry. Samples that do not diffuse the charge produced by the electron beam, such as insulators, require special sample preparation. 

---