Electrolyte-insulator-silicon structure

The measurement of changes of the surface potential Vo at the interface between an insulator and a solution is made possible by incorporating a thin film of that insulator in an electrolyte/insulator/silicon (EIS) structure. The surface potential of the silicon can be determined either by measuring the capacitance of the structure, or by fabricating a field effect transistor to measure the lateral current flow. In the latter case, the device is called an ion-sensitive field effect transistor (ISFET). Figure 1 shows a schematic representation of an ISFET structure. The first authors to suggest the application of ISFETs or EIS capacitors as a measurement tool to determine the surface potential of insulators were Schenck (15) and Cichos and Geidel (16). 

The concept of light addressable potentiometric sensors (LAPS) was introduced in 1988 [67], LAPS is a semiconductor-based sensor with either electrolyte-insulator-semiconductor (EIS) or metal-insulator-semiconductor (MIS) structure, respectively. Figure 4.13 illustrates a schematic representation of a typical LAPS with EIS structure. A semiconductor substrate (silicone) is covered with an insulator (Si02). A sensing ion-selective layer, for instance, pH-sensitive S3N4, is deposited on top of the insulator. The whole assembly is placed in contact with the sample solution. 

Jaffrezic-Renault, N., et al., Study of the silicon nitride/aqueous electrolyte interface on colloidal aqueous suspensions and on elecholyte/insulator/semiconductor structures, Colloids Surf., 36, 59, 1989. 

A Schottky diode is always operated under depletion conditions flat-band condition would involve giant currents. A Schottky diode, therefore, models the silicon electrolyte interface only accurately as long as the charge transfer is limited by the electrode. If the charge transfer becomes reaction-limited or diffusion-limited, the electrode may as well be under accumulation or inversion. The solid-state equivalent would now be a metal-insulator-semiconductor (MIS) structure. However, the I-V characteristic of a real silicon-electrolyte interface may exhibit features unlike any solid-state device, as... 

The measurement of properties such as the resistivity or dielectric constant of PS requires some kind of contact with the PS layer. Evaporation of a metal onto the PS film-covered silicon sample produces a metal/PS/Si sandwich, which behaves like an MIS structure with an imperfect insulator. Such sandwich structures usually exhibit a rectifying behavior, which has to be taken into account when determining the resistivity [Si3, Bel4]. This can be circumvented by four-terminal measurements of free-standing PS films, but for such contacts the applied electric field has to be limited to rather small values to avoid undesirable heating effects. An electrolytic contact can also be used to probe PS films, but the interpretation of the results is more complicated, because it is difficult to distinguish between ionic and electronic contributions to the measured conductivity. The electrolyte in the porous matrix may short-circuit the silicon filaments, and wetting of PS in-... 

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