Electrical characterization of ferroelectrics

Electrical Characterization of Ferroelectric Properties in the Sub-Micrometer Scale... 

How can we get rid of the parasitic capacitance The measurement principles of recording the hysteresis loop have been introduced in the basic chapter Electrical Characterization of Ferroelectrics within this book. If we take a look at a typical measurement set-up as shown in Figure 17.14 we find that most of the parasitic contributions can be eliminated using the... 

In this book those ferroelectric solids that respond to shock compression in a purely piezoelectric mode such as lithium niobate and PVDF are considered piezoelectrics. As was the case for piezoelectrics, the pioneering work in this area was carried out by Neilson [57A01]. Unlike piezoelectrics, our knowledge of the response of ferroelectric solids to shock compression is in sharp contrast to that of piezoelectric solids. The electrical properties of several piezoelectric crystals are known in quantitative detail within the elastic range and semiquantitatively in the high stress range. The electrical responses of ferroelectrics are poorly characterized under shock compression and it is difficult to determine properties as such. It is not certain that the relative contributions of dominant physical phenomena have been correctly identified, and detailed, quantitative materials descriptions are not available. 

The electrical characterization of polar media is crucial to investigate their suitability for ferroelectric memories, piezo- or pyroelectric devices and many other ferroelectric applications (see Chapter 3). Optical characterization of polar media is fundamental to investigate their ser-vicability for electro-optic devices or applications in the field of nonlinear optics (see Chapter 4). Additionally there are intentions to characterize polar media with a combination of both, electrical and optical methods, such as to understand ferroelectric phenomena that are influenced by the action of light. 

The progress in the development and integration of ferroelectric memories (FeRAM) leads to increasing demand for electrical characterization of sub-micron structures. This article will point out the measurement problems arising from the reduction of the ferroelectric capacitor size e.g. from memory cells or nanostorage devices. Procedures and solutions are presented to overcome these problems and to increase further the resolution and speed of ferroelectric characterization to be ahead of the technological demand. 

Ersundu, A.E., Gelikbilek, M., Solak, N. Aydin, S. (2011). Glass formation area and characterization studies in the CdO-WC -Te02 ternary system. Journal of the European Ceramic Society, 31, pp. 2775-2781,0955-2219 Gridnev, S.A., Gorshkov, A.G., Sitnikov A.V. (2008). The Study of the Isothermal Crystallization and Electrical Properties of Heterogeneous Metal-Ferroelectric Nano-Composites. Ferroelectrics, 374, pp. 194-201,0015-0193... 

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