Electric Field Distribution

Increasing the electron mobility in the layer near to the electron contact proportionally increases the net injected electron current. The current may not change by exactly the same amount that the mobility is increased by if the density of injected electrons is large enough to change the electric field distribution. 

Enhanced electric-field distribution is illustrated schematically in Figure 3.8, based on reported electromagnetic simulations, for a dimer of a noble metal spherical nanoparticle. The optical field enhancement at the gap site occurs only when the incident polarization is parallel to the interparticle axis of the dimer. 

To summarize, we have shown here that enhanced electric-field distribution in metal nanoparticle assemblies can be visualized on the nanoscale by a near-field two-photon excitation imaging method. By combining this method and near-field Raman imaging, we have clearly demonstrated that hot spots in noble metal nanoparticle assemblies make a major contribution to surface enhanced Raman scattering. 

Dependence of the electric field distribution in the double layer on particle size [Zhdanov and Kasemo, 2002 Chen and Kucemak, 2004a, b], which, according to Zhdanov and Kasemo, should result in an increase in the rates of electrochemical reactions on nanometer-sized metal particles. 

In addition to packed catalyst bed, a fluidized bed irradiated by single and multi-mode microwave field, respectively, was also modeled by Roussy et al. [120]. It was proved that the equality of solid and gas temperatures could be accepted in the stationary state and during cooling in a single-mode system. The single-mode cavity eliminates the influence of particle movements on the electric field distribution. When the bed was irradiated in the multimode cavity, the model has failed. Never-... 

Fig. 16.3 Simulation of transmission spectrum for a four resonator array. FDTD simulation showing the steady state electric field distributions when the device is excited at the (a) resonant wavelength and (b) nonresonant wavelength. Note that the color levels in this image are scaled to the maximum field intensity in each image not to each other. The field levels in (b) are roughly of 20 times greater magnitude than those shown in (a), (c) Output spectrum for a device consisting of a waveguide with four evanescently coupled side cavities adjacent to it. Here each resonator consists of a cavity with four holes on either side. Reprinted from Ref. 37 with permission. 2008 Optical Society of America...

Two-dimensional numerical simulations of a 1.2-kV 4H-SiC UMOSFET with a 600-A layer of HfO as gate dielectric confirmed the benefits of using high-k gate dielectric in SiC UMOS transistors. Figure 5.3 shows electric field distribution in... 

Figure 5.3 Silvaco Atlas simulation of electric field distribution at the trench of 1,2-kV 4EI-SiC UMOSEET using ElfOj (k=25) as a gate dielectric.

Figure 5.17 Medici simulation of 2-D potential distribution in the bulk of 6H-SIC RESURF LDMOS (left) and the surface electric field distribution with and without use of field plates (right).

Figure 29.10 Magnetic and electric field distribution inside rectangular and cylin drical cavities.

Fig. 6. Hypothetical depth distribution for the density n(ot of H+ plus H° as calculated numerically by Capizzi and Mittiga (1987a, b) for a model without complex formation and with constant influx of hydrogen (top diagram). The lower diagram shows the corresponding band curvature as calculated from the electric field distribution given by Capizzi and Mittiga. Parameters nB = 4 x 1018 cm-3, eD — em = 0.05 eV, T - 393 K, D+ = 3 x 10 14 cm2/sec, D0 = 9 x 10 16 cm2/sec, t = 19 hrs.

Fig. 10.12 Electric field distribution in the capacitive sensing element utilizing time transients as...

Figure 10.1 Calculated electric field distribution in FE bulk LiNbC>3 crystals, tip radius of 50 nm, and applied voltage of 3 kV.

There remain some experimental problems. Since the conductivity of the mobile electric double layer region is higher than in bulk solution, the surface conductance alters the electric field distribution somewhat, hence the zeta potential. This is usually not significant for small values of Ka and/or ionic strengths greater than about 0.01 M. In the presence of the applied electric field, the electric double layer... 

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