Electric current density mapping

Transient electrical data collected under different bias conditions contain enough information to determine the density of states with the aid of a transient device model. One study has shown that by simultaneously fitting a number of transient current measurements, as well as steady-state device response, a non-trivial best fit for the densities of sub gap electron and hole states could be obtained [86]. In a further application of the transient device simulation it has been shown that in certain conditions the transient current extracted from a solar cell device accurately reflects the density of states of the carrier type with the greater density of deep trap states [160]. In those conditions where this approximation is true, then transient current data can be modelled with a simple expression for current due to thermally emitted charge carriers, and the current transient mapped onto a density of states function [51, 52]. However, the approximation fails in the limit of significant recombination or low electric fields. 

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