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Drain voltage temperature dependence

Replacing the respective variables in Eq. (4.3) using the Eqs. (4.5), (4.6), (4.7) and (4.8), a temperature-dependent MOS transistor model is obtained. This temperature-dependent model provides a term for the source-drain current depending on the source-gate voltage, the source-drain voltage, and the temperature. [Pg.54]

Figure 2.12 Temperature dependence of the drain current-voltage characteristics in 0.5% Oj in Ar under two substrate bias conditions. (From [97]. 2004 Material Science Forum. Reprinted with permission.)... Figure 2.12 Temperature dependence of the drain current-voltage characteristics in 0.5% Oj in Ar under two substrate bias conditions. (From [97]. 2004 Material Science Forum. Reprinted with permission.)...
The polaron model was also used by Waragai and Hotta [121] to analyze temperature-dependent data on methyl-substituted oligothiophenes. While their data did not cover a sufficient temperature range to discern a clear temperature dependence of the mobility, they noticed that [j. represented a drain voltage dependence, which they attributed to the dependence given by Eq. (14.69). Accordingly, the temperature-dependent mobility could be fitted to a thermally activated law of the form where Etot = fc/2 - ys/F, y being... [Pg.505]

Figure 8.10 Gate-voltage and drain-voltage dependence of the field effect hole mobilities for two OFETs, which were prepared at very different growth temperatures (PcFETA2 and PcFETBl of Table 8.2). Three regions (I-III) are marked for both OFETs which are discussed in the text. Figure 8.10 Gate-voltage and drain-voltage dependence of the field effect hole mobilities for two OFETs, which were prepared at very different growth temperatures (PcFETA2 and PcFETBl of Table 8.2). Three regions (I-III) are marked for both OFETs which are discussed in the text.
One step further to tune the electronic properties of a 2-D array of Ag nanoparticles with a size distribution of 7% was reported by Remade et al. [94]. These authors discussed the experimental and computational results of temperature-dependent conductivity measurements as a function of size distribution, compression of the array, and the applied gate voltage. From the temperature-dependent source-drain measurements they obtained sigmoidal-shaped and nonlinear curves (Figure 5.65). [Pg.444]

Figure 8.63 shows the temperature dependence of the mobility of DMSxT for various source-drain voltages as parameters. The mobility increases with increasing temperatures following the simple Arrhenius relationship and with increasing source-drain voltages. The least-squares lines for mobilities measured at various... [Pg.376]

Fieure 8.66. Plots of various mobilities as a function of F /kT. The arrays of circles viewed along thick short arrows indicate the temperature dependence of mobility at fixed fields the data taken at constant source-drain voltages of — 10, —20, and —30 V are shown with filled circles for the sake of clear visualization. The arrays of circles viewed along the thin long arrows indicate the field dependence of mobility at fixed temperatures. Only four arrays are labeled for simplicity. Reprinted with permission from Reference 209. Copyright 1995 The American Physical Society. [Pg.378]

Carbon-zinc is the generic term for the Leclanche and zinc chloride system. Carbon-zinc cells provide an economical source of electrical energy for low drain applications. The service life depends strongly on the discharge rate, the operating schedule and the cutoff voltage, as well as temperature and storage conditions. [Pg.414]

Figure 6. Typical ZnO-TFT characteristics with the channel layer deposited at room temperature by rf magnetron sputtering, for a TFT with a width-to-length ratio of 1.4. (a) Transfer characteristics for Vds = 20 V. The on/off ratio is 2x10. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V and a saturation mobility of 20 cmVVs. (b) Output characteristics for a ZnO-TFT. The saturation was about 230 pA under a gate bias of 40 V. The ZnO-TFT exhibits hard saturation, evidenced by the flatness of slope of each Ids curve, for large Vds- The dashed line represents the saturation drain current that follows an exponential dependence on the voltage. Figure 6. Typical ZnO-TFT characteristics with the channel layer deposited at room temperature by rf magnetron sputtering, for a TFT with a width-to-length ratio of 1.4. (a) Transfer characteristics for Vds = 20 V. The on/off ratio is 2x10. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V and a saturation mobility of 20 cmVVs. (b) Output characteristics for a ZnO-TFT. The saturation was about 230 pA under a gate bias of 40 V. The ZnO-TFT exhibits hard saturation, evidenced by the flatness of slope of each Ids curve, for large Vds- The dashed line represents the saturation drain current that follows an exponential dependence on the voltage.
Fig. 6. Dependence of drain current, on gate-source voltage, Uqs, for depletion type of n-MISFET at different temperatures. Uj, threshold voltage. Fig. 6. Dependence of drain current, on gate-source voltage, Uqs, for depletion type of n-MISFET at different temperatures. Uj, threshold voltage.
The internal resistance of a Na/S cell is higher than that of a comparable lead/acid cell. This higher resistance leads to reduced voltage at high current drains and limits the voltage efficiency of the Na/S battery to, typically, 65-85% depending upon the power output. This is not entirely wasteful as some heat output is required, in any event, to maintain the battery at operating temperature-... [Pg.425]


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