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Doping injection

The bipolar junction transistor (BIT) consists of tliree layers doped n-p-n or p-n-p tliat constitute tire emitter, base and collector, respectively. This stmcture can be considered as two back-to-back p-n junctions. Under nonnal operation, tire emitter-base junction is forward biased to inject minority carriers into tire base region. For example, tire n type emitter injects electrons into a p type base. The electrons in tire base, now minority carriers, diffuse tlirough tire base layer. The base-collector junction is reverse biased and its electric field sweeps tire carriers diffusing tlirough tlie base into tlie collector. The BIT operates by transport of minority carriers, but botli electrons and holes contribute to tlie overall current. [Pg.2891]

It is possible to add modifiers or delustrants at the dissolving stage. However, modem viscose dope plants feed several spinning machines which are often expected to make different grades of fiber. It is therefore now more common to add the materials needed to make special fibers by injection close to the spinning machines. [Pg.347]

Fig. 6. Schematic of dry-jet wet spinning employing tube-in-orifice spinneret A, bore injection medium (liquid, gas, or suspended soHds) B, pump C, spinneret D, polymer spinning solution E, micrometer ( -lm) "dope" filter F, coagulation or cooling bath G, quench bath and H, collection spool. Fig. 6. Schematic of dry-jet wet spinning employing tube-in-orifice spinneret A, bore injection medium (liquid, gas, or suspended soHds) B, pump C, spinneret D, polymer spinning solution E, micrometer ( -lm) "dope" filter F, coagulation or cooling bath G, quench bath and H, collection spool.
In most spinning processes, the fiber emerging from the spinneret is drawn down to a desired dimension before complete solidification. In some production lines, a laser beam is uti1i2ed to monitor the dimensions of emerging thread any alteration is recorded and if required, the dope deHvery rate, take-up rate, and internal-injection medium deHvery rate are adjusted automaticaUy. [Pg.148]

Finally, an electric current can produce injection luminescence from the recombination of electrons and holes in the contact 2one between differendy doped semiconductor regions. This is used in light-emitting diodes (LED, usually ted), in electronic displays, and in semiconductor lasers. [Pg.422]

A thin layer deposited between the electrode and the charge transport material can be used to modify the injection process. Some of these arc (relatively poor) conductors and should be viewed as electrode materials in their own right, for example the polymers polyaniline (PAni) [81-83] and polyethylenedioxythiophene (PEDT or PEDOT) [83, 841 heavily doped with anions to be intrinsically conducting. They have work functions of approximately 5.0 cV [75] and therefore are used as anode materials, typically on top of 1TO, which is present to provide lateral conductivity. Thin layers of transition metal oxide on ITO have also been shown [74J to have better injection properties than ITO itself. Again these materials (oxides of ruthenium, molybdenum or vanadium) have high work functions, but because of their low conductivity cannot be used alone as the electrode. [Pg.537]


See other pages where Doping injection is mentioned: [Pg.398]    [Pg.134]    [Pg.346]    [Pg.398]    [Pg.134]    [Pg.346]    [Pg.2861]    [Pg.2891]    [Pg.2892]    [Pg.240]    [Pg.148]    [Pg.149]    [Pg.113]    [Pg.115]    [Pg.126]    [Pg.134]    [Pg.468]    [Pg.350]    [Pg.350]    [Pg.336]    [Pg.466]    [Pg.131]    [Pg.258]    [Pg.707]    [Pg.126]    [Pg.127]    [Pg.129]    [Pg.167]    [Pg.182]    [Pg.201]    [Pg.203]    [Pg.216]    [Pg.224]    [Pg.226]    [Pg.254]    [Pg.398]    [Pg.451]    [Pg.471]    [Pg.539]    [Pg.547]    [Pg.127]    [Pg.199]    [Pg.758]    [Pg.769]    [Pg.286]    [Pg.414]    [Pg.461]    [Pg.91]   
See also in sourсe #XX -- [ Pg.495 , Pg.513 , Pg.514 , Pg.515 , Pg.553 , Pg.580 , Pg.602 , Pg.603 , Pg.604 , Pg.605 , Pg.606 , Pg.607 , Pg.608 , Pg.617 , Pg.618 , Pg.619 , Pg.620 , Pg.621 , Pg.622 , Pg.623 , Pg.624 , Pg.647 , Pg.650 , Pg.661 , Pg.674 , Pg.676 , Pg.684 ]




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Doping and Charge Injection

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