Density silicon nitride

Engel, W., Lange, E. and Muller, N., Injection Moulded and Duo-density Silicon Nitride. In Ceramics for High Performance Applications II Burke, J.J., Lenoe, E.N. and Katz, R.N. (Eds), 527-538, Brook Hill (1978). 

As noted, the oxidation resistance of silicon nitride ceramics depends on the type and concentration of the sintering aids. In materials designed for high temperature appHcations the specific weight gain resulting from oxidation upon a 500-h air exposure at 1200°C and 1350°C is about 1—2 g/m and 2—4 g/m, respectively. The kinetics of the oxidation process have been iavestigated (63,64) as has the corrosion resistance (65). Corrosion resistance is also dependent on material formulation and density. 

Silicon Nitride. SiUcon nitride is manufactured either as a powder as a precursor for the production of hot-pressed parts or as self-bonded, reaction-sintered, siUcon nitride parts. a-SiUcon nitride, used in the manufacture of Si N intended for hot pressing, can be obtained by nitriding Si powder in an atmosphere of H2, N2, and NH. Reaction conditions, eg, temperature, time, and atmosphere, have to be controlled closely. Special additions, such as Fe202 to the precursor material, act as catalysts for the formation of predorninately a-Si N. SiUcon nitride is ball-milled to a very fine powder and is purified by acid leaching. SiUcon nitride can be hot pressed to full density by adding 1—5% MgO. 

The reinforcing fibers are usually CVD SiC or modified aluminum oxide. A common matrix material is SiC deposited by chemical-vapor infiltration (CVI) (see Ch. 5). The CVD reaction is based on the decomposition of methyl-trichlorosilane at 1200°C. Densities approaching 90% are reported.b l Another common matrix material is Si3N4 which is deposited by isothermal CVI using the reaction of ammonia and silicon tetrachloride in hydrogen at 1100-1300°C and a total pressure of 5 torr.l" " ] The energy of fracture of such a composite is considerably higher than that of unreinforced hot-pressed silicon nitride. 

Fig. 6.6 PS layer thickness inhomogeneities as a result of different kinds of masking layers and doping densities, (a) While underetching is minimal for a silicon nitride mask, (b) a resist mask shows severe under-etching.

Most structural PMCs consist of a relatively soft matrix, such as a thermosetting plastic of polyester, phenolic, or epoxy, sometimes referred to as resin-matrix composites. Some typical polymers used as matrices in PMCs are listed in Table 1.28. The list of metals used in MMCs is much shorter. Aluminum, magnesium, titanium, and iron- and nickel-based alloys are the most common (see Table 1.29). These metals are typically utilized due to their combination of low density and good mechanical properties. Matrix materials for CMCs generally fall into fonr categories glass ceramics like lithium aluminosilicate oxide ceramics like aluminnm oxide (alnmina) and mullite nitride ceramics such as silicon nitride and carbide ceramics such as silicon carbide. 

Inductive coupling to quartz tube Silicon nitride from silane- n2 No specific chemistry Plug flow Mean electron density measured with microwave interferometry 72... 

Figure 5.5 Surface charge density of commercial silicon nitride in NaN03 aqueous solutions as a function of pH. Redrawn after Ref. [92],...

Silicon nitride is prized for its hardness (9 out of 10 on the Mohr scale), its wear resistance, and its mechanical strength at elevated temperatures. It melts and dissociates into the elements at 1,900 °C, and has a maximum use temperature near 1,800 °C in the absence of oxygen and near 1,500 °C under oxidizing conditions.41 It also has a relatively low density (3.185 g/cm3). Unlike silicon carbide, silicon nitride is an electrical insulator. The bulk material has a relatively good stability to aggressive chemicals. This combination of properties underlies its uses in internal combustion engines and jet engines. 

FIGURE 3.6. (a) Cross-sectional schematics of a silicon wafer with a nanopore etched through a suspended silicon nitride membrance. SAM is formed between sandwiched Au eletrodes in the pore area (circled), (b) I(V) characteristics of a Au-2 -amino-4-ethynylphenyl-4-ethynylphenyl-5 -nitro-1 -benzenethiolate-Au (chemical structure shown below) molecular junction device at 60 K. The peak current density is 50 A/cm2, the NDR is 2400 pQ. cm2, the peak-to-valley ratio is 1030 1. [Adapted from Ref.30 Chen el al., Science 286, 1550-1552 (1999).]... 

The bulk densities of all the materials were determined using Archimedes method (AS 1774.5, 1979). The Vickers indentation technique was used to measure the hardness in each case. The applied load in the Vickers hardness tests was 10 kg for silicon nitrides and sialons. However, using the same load produced severe lateral cracking in silicon carbides around indents, which prevented the accurate measurement of the diagonals of indents. Therefore the load was reduced to 0.3 kg for silicon carbide samples. 

Figure 8 Silicon nitride film density as a function of Si/N ratio for different diluents.4 Reprinted by permission of the publisher, The Electrochemical Society, Inc.

In [55] a large-area fabrication of hexagonally ordered metal dot arrays with an area density of 10u/cm2 was demonstrated. The metal dots were produced by an electron beam evaporation followed by a lift-off process. The dots size was 20 nm dots with a 40 nm period by combining block copolymer nanolithography and a trilayer resist technique. A self-assembled spherical-phase block copolymer top layer spontaneously generated the pattern, acting as a template. The pattern was first transferred to a silicon nitride middle layer by reactive ion etch, producing holes. The nitride layer was then used as a mask to further etch into a polyamide bottom layer. 

A simple way of studying the interfaces is to use multilayer samples, which contain many interfaces and to apply the techniques normally used for bulk measurements. Fig. 9.20 shows ESR data of the silicon nitride interface for such samples (Tsai, Street, Ponce and Anderson 1986b). The total thickness of each sample, 0.6 pm, and the thicknesses of the nitride and a-Si H layers are equal the only difference is in the thicknesses of the individual layers and therefore in the number of interfaces. The dependence of the ESR spin density on this parameter shows that the interfaces dominate most of the spin measurements. It is not possible, however, to separate out the effects of the top and bottom interfaces, both of which are present in equal number. The top nitride interface is presumably the main source of the signal, since it has the larger interface state density. 

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