Defects zinc oxide films

Rosen CZ, Hiremath BV, Newnham R (eds) (1992) Piezoelectricity. Springer-Verlag, New York Roy S, Basu S (2002) Improved zinc oxide film for gas sensor apphcations. BuU Mater Sci 25 513-515 Sanchez-Pedreno JAO, Drew PKP, Alder JF (1986) The investigation of coating materials for the detection of nitrobenzene with coated quartz piezoelectric crystals. Anal Chim Acta 182 285-291 Scheide EP, Taylor JK (1974) Piezoelectric sensor for mercury in air. Environ Sci Technol 8 1087-1091 Schulz M, Sauerwald J, Richter D, Fritze H (2009) Electromechanical properties and defect chemistry of Mgh-temper-ature piezoelectric materials. Ionics 15 157-161... 

Schneider JJ, Hoffmann CR, Jorg E, Stefan D, Andreas K, Emre E, et al. Zinc oxide derived from single service precursor chemistry under chimie douce conditions formation pathway, defect chemistry and possible applications in thin film printing. J Mater Chem 2009 19 1449-57. 

The potential difference between the achvely corroding defect and the intact polymer/ metal interface is 500mV for the just oxide-covered zinc siuface and only 150mV for the conversion-coated surface. The delaminahon rate of the transparent polymer film in the con-version-coated area observed to be about 40 times smaller than for the just alkaline cleaned sample. This fact is in qualitative agreement with the measured inhibition of the oxygen reduction. 

On the other hand, the presence of Li increases the growth rate. Equation (E9.23F) shows that the presence of Li increases the hole concentration, decreasing the electron concentration. From Equation (E9.23C), we conclude that [Znt] increases. We deduce that the growth rate increases when the zinc interstitial concentration increases. Additionally, Equation (E9.23G) shows that the oxygen interstitial concentration decreases. Since the growth rate goes in proportion to the zinc defect concentration, and behaves oppositely to the oxygen interstitial concentration, we conclude that transport of Zn across the ZnO film is the mechanism by which the oxidation reaction proceeds. 

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