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Defects electron microscopy

A special mention is in order of high-resolution electron microscopy (HREM), a variant that permits columns of atoms normal to the specimen surface to be imaged the resolution is better than an atomic diameter, but the nature of the image is not safely interpretable without the use of computer simulation of images to check whether the assumed interpretation matches what is actually seen. Solid-state chemists studying complex, non-stoichiometric oxides found this image simulation approach essential for their work. The technique has proved immensely powerful, especially with respect to the many types of defect that are found in microstructures. [Pg.221]

In this chapter shock modification of powders (their specific area, x-ray diffraction lines, and point defects) measurements via analytical electron microscopy, magnetization and Mossbauer spectroscopy shock activation of catalysis, solution, solid-state chemical reactions, sintering, and structural transformations enhanced solid-state reactivity. [Pg.160]

Carr and his co-workers [86C01, 87C01] have shown that transmission electron microscopy is a powerful tool in characterizing linear and higher-order defect configurations and their densities on shock-modified rutile, alumina, aluminum nitride, and zirconia [84H02]. The principal impediment to detailed characterization of shock-formed defects is their very high concentrations, which prevent identification of specific deformation features except in... [Pg.167]

The length and the diameter of MWCNT can be measured directly by TEM. From high-resolution transmission electron microscopy (HRTEM) images exhibiting oo.l fringes follows the number of coaxial tubes and possibly the microstructure of the caps in MWCNT, as viewed along the incident electron beam [24], Also anomalous intercylinder spacings and defects are revealed in this way [1,11]. [Pg.26]

Multi-walled CNTs (MWCNTs) are produced by arc discharge between graphite electrodes but other carbonaceous materials are always formed simultaneously. The main by-product, nanoparticles, can be removed utilizing the difference in oxidation reaction rates between CNTs and nanoparticles [9]. Then, it was reported that CNTs can be aligned by dispersion in a polymer resin matrix [10]. However, the parameters of CNTs are uncontrollable, such as the diameter, length, chirality and so on, at present. Furthermore, although the CNTs are observed like cylinders by transmission electron microscopy (TEM), some reports have pointed out the possibility of non-cylindrical structures and the existence of defects [11-14]. [Pg.76]

Investigations based on equation (a) are indirect. Direct structural studies using diffraction techniques (X-ray or neutron), or electron microscopy, while they cannot detect the low concentrations of defects present in NiO or CoO are indispensible to the study of grossly non-stoichiometric oxides like FeO, TiOj, WOj etc., and particularly electron microscopes with a point-to-point resolution of about 0.2 nm are widely used. The first direct observation of a point defect (actually a complex of two interstitial metal atoms, and two oxygen atoms in Nb,2029) was made" using electron microscopy. [Pg.252]

Fig. 4 Osmium clusters supported on MgO(OOl) a OssC/MgisOs and b OS5C at a surface point Vs defect site [33] these were represented by density functional theory, and the samples were characterized by EXAFS spectroscopy, transmission electron microscopy, and other techniques [15]... Fig. 4 Osmium clusters supported on MgO(OOl) a OssC/MgisOs and b OS5C at a surface point Vs defect site [33] these were represented by density functional theory, and the samples were characterized by EXAFS spectroscopy, transmission electron microscopy, and other techniques [15]...
Fig. 4.15 The use of etch stops to visualize defects in a dynamic random access memory (DRAM) structure for subsequent electron microscopy inspection. If a bias is applied to the silicon substrate, as shown in (a), the polysili-... Fig. 4.15 The use of etch stops to visualize defects in a dynamic random access memory (DRAM) structure for subsequent electron microscopy inspection. If a bias is applied to the silicon substrate, as shown in (a), the polysili-...
While electron microscopy is an invaluable tool for characterization of graphene, it is a costly and often time-consuming technique. In contrast, Raman spectroscopy is a quick and easy method to obtain a wide range of properties of graphene, including flake size, layer number, defect density, and doping levels amongst others [118]. [Pg.33]

Fig. 4.4 Molecular model of (a) surface containing positive and negative curvature induced by a pentagon (red) and a heptagon (blue), respectively (b) molecular model of 5-7 defects (yellow) and a Thrower-Stone-Wales defect (green) [82] (c) high-resolution transmission electron microscopy (HRTEM) images of bond rotations V2 (555-777) divacancy, and (d) V2(5555-6-7777) divacancy within graphene scale bar is 1 nm [75]. Fig. 4.4 Molecular model of (a) surface containing positive and negative curvature induced by a pentagon (red) and a heptagon (blue), respectively (b) molecular model of 5-7 defects (yellow) and a Thrower-Stone-Wales defect (green) [82] (c) high-resolution transmission electron microscopy (HRTEM) images of bond rotations V2 (555-777) divacancy, and (d) V2(5555-6-7777) divacancy within graphene scale bar is 1 nm [75].
P. A. Thrower, Study of defects in graphite by transmission electron microscopy, Chem. Phys. Carbon, vol. 5, pp. 217-319,1969. [Pg.109]


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See also in sourсe #XX -- [ Pg.1087 , Pg.1111 ]




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