Dc sputtering

In DC sputtering, the plasma is formed between a metal target which acts as the source of atoms, and which is held at a negative potential with respect to the condensation substrate, which may be a metal or an insulator. The source... 

Figure 10.4 Area-normalized CL spectra of Pt4/7/2 for the pure Pt (dotted Une), Pt5gCo42 (solid line), and PtgoRu4o (dashed line) alloys with respect to p (a) as-prepared (h) after electrochemical stabilization. The samples were thin film pure Pt or Pt-based alloys (diameter 8 mm and thickness 80 nm) prepared on Au disks by DC sputtering. Electrochemical stabilization of Pt58 C042 was performed by repeated potential cycling between 0.075 and 1.00 V at a sweep rate of 0.10 V s in 0.1 M HCIO4 under ultrapure N2 (99.9999%) until CV showed a steady state. PtgoRu4o was stabilized by several potential cycling between 0.075 and 0.80 V at 0.10 V s in 0.05 M H2SO4 under ultrapure N2. (From Wakisaka et al. [2006], reproduced by permission of the American Chemical Society.)...

Cu, In, Ga, and Se are codeposited from the solution at room temperature in a three-electrode cell configuration, where the reference electrode is a platinum pseudo-reference, the counter electrode is platinum gauze, and the working electrode is the substrate. The substrates typically used are glass, DC-sputtered with about 1 pm of Mo. In all experiments, the applied potential is -1.0V versus the Pt pseudo-reference electrode. The corresponding current density range for the deposition is 5 to 7 mA/cm2. 

Keeping in mind that the dc sputter-deposited Pt films have the completely electrochemical-active surface, the fractal dimensions of the rough film surfaces were calculated from Eq. (27) according to the peak-current method by taking the slopes of the (log 7peak - log v) plots within the scan rate range of v0 to... 

DC sputtering Metals, some semiconductors some insulators (reactive sputtering) Vacuum, works best with conductors, better than vapor evaporation for high-melting species, better adhesion than vapor evaporation, but rougher surface reactive sputtering of metals in presence of oxygen or other reactive gas can deposit some insulators... 

Fig. 5.1. Setup for glow discharge sputter deposition of ZnO by reactive DC sputtering of a metallic Zn target in an Ar/02 atmosphere...

Accurate process control required Conventional DC- or Pulsed DC-Sputtering stable process ... 

Porous structure of the outer support surface has been modified by deposition of the additional layer of metal Ni. Two vacuum condensation techniques have been used for nickel deposition dc ion magnetron sputtering and electron beam evaporation. To produce coatings on tubes additional installation for dc sputtering has been designed. 

Hamano et al. (1982) have fabricated an a-Si H photodiode array linear image sensor. The sensor structure is shown in Fig. 5. The sensor is constructed by first forming individual electrodes on a glass or a ceramic substrate. Then l-/mi-thick undoped a-Si H is produced at 230°C by glow-discharge decomposition of silane and finally 1500-A-thick ITO common electrode, which also acts as an antireflection coating, is deposited by dc sputtering. 

Reactive Ion Etching. Etching experiments were carried out in an Applied Materials Model 8110 Hex reactor. Alternatively, a Cook Vacuum Products Inc. Model C71 RF/DC Sputtering Module was employed. Film thickness measurements were taken before and after etching to determine etching rates, and the rates were typically compared to that of the novolac-diazoquinone photoresist, HPR-206, baked at 210 C for 1 hour. Measurements were obtained on a Dektak Model IIA profilometer. 

DC sputtering cannot be used with targets which are electrically nonconducting, because impingement of the positive argon ions creates a positive charge on the surface of the target, which then ceases to attract the ions. It can be used for... 

Oveidoped superconducting Nd2.xCexCu04,s (NCCO) (x = 0.17) thin films have been fabricated by using a planar dc sputtering technique. Current-voltage (I-V) characteristics and critical current densities Jc have been measured as function of the perpendicular magnetic field at different temperatures. Films with critical temperatures around 10 K and critical current densities above 10 A/m at T = 2.1 K have been obtained. 

In conclusions, transport properties have been measured on c-axis oriented Nd2.xCexCu04 5 thin films (with jc = 0.17) prepared by dc sputtering technique. 

---