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D Rambus DRAM

If the 2.5-D technology is available, it s possible to re-organize the RDRAM chip so that the signal path can be significantly reduced. Suppose we need to design a memory system composed of four RDRAM chips. In the conventional solution, the four chips will be serially connected as shown in Fig. 3.5. In a 2.5-D stacked memory system illustrated in Fig. 3.6, the DRAM cells can now be placed into four layers and vertically stacked. The memory bus will be through inter-chip contacts, which have only a vertical height of 50 pm. As a result, 2.5-D stacked Rambus DRAM has a considerable potential to achieve superior performance at a relatively low cost. [Pg.49]


Keywords 2.5-D integration, crossbar, Rambus DRAM, reconfigurable data-path, microprocessor, memory, latency. [Pg.42]


See other pages where D Rambus DRAM is mentioned: [Pg.46]    [Pg.48]    [Pg.50]    [Pg.46]    [Pg.48]    [Pg.50]    [Pg.42]    [Pg.46]   


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