Current voltage characteristic for

Fig. 19 Current-voltage characteristics for ITO/donor/Cgo/BCP/Al based OPVs, donor = CuPC or PtTPBP. Images to the right show the structures of the donors and their HOMO and LUMO orbitals in blue and red, respectively. Steric interactions with the PtTPBP phenyl groups prevent close association of the donor and Cgo...

Fig. 2.2 Current-voltage characteristic for helium at 78 K. Small deviations from straight-line behavior are usually present in the high field regime.

These results are at variance with Lauger s interpretation of the saturation current-voltage characteristics for valinomycin-K+ in phos-phatidylserine bilayer membranes, which he purports to be due to limiting decomplexation rates. 

This can be elucidated by a corrosion diagram (Fig. 12), which shows in semilogarithmic coordinates current-voltage characteristics for two conjugated reactions. Using condition (43) and neglecting ohmic potential drop in the system, one can find from the intersection of those characteristics the steady state corrosion current icorr and corrosion potential [Pg.283]

Figure 11 Current-voltage characteristics for N3-dye-sensitized Ti02 solar cells under illumination and dark using the electrolyte with and without TBP.

Subcell Approach Stumper et al.135 presented the subcell approach to measure localized currents and localized electrochemical activity in a fuel cell. In this method a number of subcells were situated in different locations along the cell s active area and each subcell was electrically isolated from each other and from the main cell. Separate load banks controlled each subcell. Figure 8 shows the subcells in both the cathode and anode flow field plates (the MEA also had such subcells). The current-voltage characteristics for the... 

FIGURE 3. A typical current-voltage characteristic for a photovoltaic cell. 

Fig. 14. Schematic of the Hg drop electrode set-up and current-voltage characteristics for a Si(lll) substrate modified by a decyl monolayer (Cio) and with a clean native oxide (SiC>2). The decyl monolayer was formed by a thermal reaction of decylmagnesium bromide with H/Si(lll). The contact areas of the Hg drop were measured optically and were typically 2 X 10-3cm-2. Reprinted from [81].

Fig. 2.20 Current-voltage characteristic for a metal-semiconductor rectifying junction.

Fig. 2.22 Current-voltage characteristic for back-to-back Schottky barriers.

Fig. 4.23 Current-voltage characteristic for a PTC thermistor in thermal equilibrium.

The current-voltage characteristics for the electron gun with the prototype (Fig. 2d) and the new (Fig. 2b) CMU design were measured. As one can see, at the anode voltage +10 kV (an operation mode for the cathodoluminescent lamps) the maximum value of the modulator voltage is 1200-1300 V (at the cathode current 100 pA). 

Figure 4.7 gives the current-voltage characteristic for a 2-band system with a band gap of 1.30 eV. The efficiency r is shown in Fig. 4.8. With increasing band gap q> the short-circuit current decreases and the open-circuit voltage increases. The efficiency r), taken as the maximum power for each band gap divided by the incident energy current density of 1.39 kW/m2, has a maximum value of 29.9% for a band gap of 1.30 eV.

Fig. 1. Current-voltage characteristics for (a) threshold switching and (b) memory switching.

Figure 64 Current-voltage characteristics for single-layer (SL) EL cells based on anthracene (a) and tetracene (b) single crystals with unipolar and double injection contacts. Na/K-Na/K mononegative carrier injection, Au-H20 mono-positive carrier injection, Au-Na/K double injection. The crystal thicknesses are 98 and 108 pm for anthracene and tetracene, respectively. The slopes of the straight-line segments for tetracene characteristics are given nearby the curves. After Ref. 51.

Figure 79 Current—voltage characteristics for ITO/TPD/A1 (a) and Al/Alq3/Ca (b) from Figs. 68a and 69 a, respectively, replotted in the scales corresponding to the straight-line behavior according to Eq. (208). The curves in part (a) are parametric in temperature as in Fig. 68a, and in part (b) are parametric in thickness as given in the figure. Adapted from Campbell et al. [356a] and Briitting et al. [355] and respectively.

Fig. 9.28. Current-voltage characteristics for a resonant tunneling multilayer exhibiting telegraphic noise. The insert shows the time dependence of the current at a voltage of 0.5 V (Arce and Ley 1989).

A simple analytical model of thermionic converter performance must be made before the impact of converter performance on system behavior can be studied. Fortunately, a very simple model of converter performance has been found to be sufficiently accurate for this purpose. The ideal thermionic diode serves as the basis for this model. Motive diagrams and converter current voltage characteristics for an ideal diode are shown in Figure 2. 

Figure 4.15. Top Cross section of a MISS diode. The device can be regarded as a reverse-biased metal-insulator-semiconductor diode in series with a for-ward-biased n-p Junction. It then exhibits two stable states separated by an unstable negative resistance region. Bottom Current-voltage characteristics for a GaAs-(j -TA MISS device. The LB film thickness is approximately 9 nm...

Figure 3. Current-voltage characteristics for plasma-polymerized hexameihyl-disilazane (film thickness 0.87 m)...

An interesting consequence of these calculations is that the normalised mean stationary current—voltage characteristics are similar for different electrodes and electrolytes. An example is shown in Fig. 3.19 where the normalised mean current—voltage characteristics for a sodium hydroxide solution with different concentrations is depicted. 

We will now discuss qualitatively the mean current—voltage characteristics. For not too high voltages (or currents), it follows from (3.68) that the bubble... 

Figure 7. Current-voltage characteristic for an Anderson-Dayem bridge...

Fig. 6.3. Semiconductor representation for (a) NIN, (b) NIS, and (c) SIS tunnel junctions showing the DOS vs. energy. The expected current/voltage characteristic for each type of junction is included on the right hand side. In each case the Fermi level of metal 1 is raised by e F with respect to metal 2. The dashed lines indicate the characteristics at T>0, and the solid lines indicate the current for T — 0.

During FY02, we continued to improve the tube performance by improving the tube microstructure. Figure 1 shows the current-voltage characteristics for various electrolyzer tubes as compared to disk data. 

Figure 6.1.2 Current-voltage characteristic for an electrolytic cell (4 ° = 0).

---