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Crystal growth techniques

Although much crystallization from a solution is performed at low temperatures, crystals may also be formed from molten sohds. For example, the Czochralski (CZ) method for purification of silicon uses a seed crystal on the surface of the melt maintained slightly above its melting point. As the crystal is slowly pulled from the [Pg.27]

Since the compound of interest is not soluble in the layered nonsolvent, crystal formation may begin at the interfacial region. If the nonsolvent is volatile, vapor diffusion may provide another route for the growth of crystals. [Pg.25]


At present, defect-free silicon crystals have been achieved at only at diameters of 200 mm. Comparisons of crystal quality were made among three techniques a typical conventional Czrochralski crystal growth technique, a slow-cooled controlled reaction and the perfect silicon process. The quality levels achieved in D-defect levels of the material is... [Pg.336]

Since uranium continues in being one of the most interesting elements of the actinide series, available in sufficient quantity and purity without necessitating special handling precautions, it is obvious that frequently crystal growth techniques have been developed with uranium compounds. [Pg.59]

The development of a low temperature crystal growth technique utilizing KOH as a flux by Wignacourt et al. (10) and his demonstration of its utility for studying the composition - structure... [Pg.354]

With the advances of the non-equilibrium crystal growth techniques, other 1I1-V magnetic semiconductors than (Ga,Mn)As and (In.Mn)As with different host semiconductors and different transition metals have appeared and the investigation of properties of these new materials are underway. [Pg.12]

In contrast with the difluorides, the distribution of trifluorides extends to the third series of the transition metals, where iridium and gold trifluorides are fully characterized. In the second series, trifluorides are known for the elements from niobium to rhodium, with the exception of technetium, and in the first series, from titanium to cobalt. All the trifluorides have been characterized structurally, with earlier reports based on X-ray powder-diffraction data, since the compounds were not prepared in single-crystal form until more recently, when high-temperature, crystal-growth techniques became available. [Pg.89]

FIGURE 2 Single crystal AIN grown using a high pressure. RF, bulk crystal growth technique. [Pg.376]

The reader is referred to the second chapter Preparative Methods by J. Grannec and L. Lozano in Inorganic Solid Fluorides , edited by P. Hagenmuller [3], for information on chemical syntheses and crystal growth techniques anterior to 1985, and for general instructions in major preparative techniques in the field of inorganic fluorine chemistry. Some excellent reviews of different topics in the field have been published past 1985 [4-9]. The wide synthetic possibilities of super-acidic media are described in T.A. O Donnell s book [10]. Synthetic and characterization methods with emphasis on solid compounds have been summarized in a book edited by A.K. Cheetham and P. Day [11],... [Pg.5]

Several review articles and a comprehensive book already exist which describe the detailed synthesis of the miscellaneous organic donor molecules and the experimental procedures to obtain organic conducting salts [33]. Therefore, only a few introductory remarks concerning the principal crystal growth technique will be given here. [Pg.7]

However, the cost for equipments and parts increases rapidly with the size. Therefore, without increasing the diameter for an economic ingot production, a continuous process should be considered seriously in the near future. In fact, among the available crystal growth techniques for PV applications,... [Pg.36]

The purest single crystals from silicon can be grown after the crucible-free FZ crystal growth technique, presently (2008) with a maximum diameter of 200 mm. The low energy effort for the growth and no need for a crucible are the economic advantages. [Pg.52]

Montgomery, L. K. Chemical Synthesis and Crystal Growth Techniques. In Organic Conductors Fundamentals and Applications Farges, J.-P., Ed. Marcel Dekker New York, 1994 Vol. 4, pp 115-145. [Pg.772]

SYNTHESIS, PURIFICATION AND CHARACTERIZATION OF COORDINATION COMPOUNDS - including a detailed survey of aqua metal ions, the use of solvents, chromatographic methods, and crystal growth techniques. [Pg.824]

Probably the most widely used methods of reactant preparation are by crystallization, or by precipitation fi-om solution. Sometimes use can be made of a silica-gel crystal growth technique [2], especially when the compound formed is a sparingly-soluble precipitate from aqueous solution. [Pg.31]


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See also in sourсe #XX -- [ Pg.217 ]




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Confined crystal growth techniques

Crystallization techniques

Czochralski pulling crystal growth technique

Growth Techniques

Melt techniques, crystal growth

Pulling crystal growth technique

Single crystals, growth using melt techniques

Single-Crystal Growth by a Double-Infusion Technique

State-of-the-Art Crystal Performance for Continuous-Growth Techniques

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