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Copolymers hole mobility

Fig. 8 Temperature dependence of the zero field hole mobility in the low carrier density limit in a polyfluorene copolymer. The data are inferred from space-charge-limited current experiments and analyzed in terms of the extended Gaussian disorder model (see Sect. 4.1). From [90] with permission. Copyright (2008) by the American Institute of Physics... Fig. 8 Temperature dependence of the zero field hole mobility in the low carrier density limit in a polyfluorene copolymer. The data are inferred from space-charge-limited current experiments and analyzed in terms of the extended Gaussian disorder model (see Sect. 4.1). From [90] with permission. Copyright (2008) by the American Institute of Physics...
Khan RUA, Poplavskyy D, Kreouzis T, Bradley DDC (2007) Hole mobility within arylamine-containing polyfluorene copolymers a time-of-flight transient-photocurrent study. Phys Rev B 75 035215... [Pg.60]

In a FET device with highly doped Si as the gate and Si02 as the gate insulator, the hole mobility of the alternating copolymer 20 was measured.37... [Pg.199]

The hole mobility of the copolymer is 1 X 10-3 cm2/V s, which well supports its outstanding photovoltaic performance. [Pg.200]

Dithienosilole-thiophene copolymers 21 (Fig. 10) can show excellent FET performances.38 With the copolymers as the active layer, remarkably high hole mobility from 0.02 to 0.06 cm2/(V s) can be achieved. Furthermore, the FET devices possess high current on/off ratios of 105—106. The FET devices also display impressive stabilities under repeated on/off cycles up to 2000 in air. [Pg.200]

Borsenberger et al. (1993) measured hole mobilities of TAPC doped into a series of styrene (S) butylacrylate (BA) copolymers with different dipole moments. The dipole moments of the S and BA monomers are 0.40 and 1.52 Debye. By varying the S BA ratio from 100 0 to 50 50, the copolymer dipole moment can be varied from 0.40 to 0.96 Debye. Figure 35 shows the room temperature field dependencies for different S BA ratios. The mobilities vary by nearly two orders of magnitude, increasing with decreasing copolymer dipole moment. In all cases, the field dependencies were described as logp,... [Pg.385]

Figure 35 The field dependencies of the hole mobilities of TAPC doped into a series of S BA copolymers. Figure 35 The field dependencies of the hole mobilities of TAPC doped into a series of S BA copolymers.
Andersson LM, Inganas O (2006) Acceptor influence on hole mobility in fullerene blends with alternating copolymers of fluorene. Appl Phys Lett 88 082103... [Pg.76]

Jenekhe et al. have synthesized a processable copolymer 214 of thiophene and phenoxazine [389], which presents a hole mobility of 6 x 10 cm s PT derivatives incorporating fluorinated phenylene units in the main chain such as 215 have been investigated by Skabara and coworkers [390]. Although hole mobility (2 x 10 cm s for 215) requires further improvement, they have shown that copolymers containing the tetrafluorophenyl unit are superior to the unsubstituted or difluorophenylene analogs. [Pg.527]

Wang, R, J. Luo, K. Yang, J. Chen, R Huang, and Y. Cao. 2005. Conjugated fluorene and sUole copolymers Synthesis, characterization, electronic transistion, light emission, photovoltaic cell, and field effect hole mobility. Macromolecules 38 2253-2260. [Pg.556]

Although polythiophenes are best utilized as solution-processable high-performance p-type semiconductors [102], polyselenophenes are of no use as FET materials because of their insolubility. However, it was recently reported that selenophene-containing copolymers 47-50 could form thin films with a solution-processable method and showed p-channel FET responses with hole mobilities of the order of 10 " -10 cm V s [103]. When the thin films were annealed after spin coating, the mobilities were enhanced by one order of magnitude. [Pg.331]

Ha JS, Kim KH, Choi DH (2011) 2,5-Bis(2-octyldodecyl)pyrrolo[3,4-c]pynole-l,4-(2H,5H)-dione-based donor-acceptor alternating copolymer bearing 5,5 -di(thiophen-2-yl)-2,2 -biselenophene exhibiting 1.5 cm s hole mobility in thin-film transistors. J Am Chem Soc 133 10364-10367... [Pg.32]


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See also in sourсe #XX -- [ Pg.199 ]




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