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Dithienosilole-thiophene copolymers

Dithienosilole-thiophene copolymers 21 (Fig. 10) can show excellent FET performances.38 With the copolymers as the active layer, remarkably high hole mobility from 0.02 to 0.06 cm2/(V s) can be achieved. Furthermore, the FET devices possess high current on/off ratios of 105—106. The FET devices also display impressive stabilities under repeated on/off cycles up to 2000 in air. [Pg.200]

Dithienosilole-thiophene alternating copolymer 21 is the important example for the electrical conduction of SCPs.42 When the copolymer is doped with iodine, a high electrical conductivity of 400 S cm-1 can be achieved. This value is the highest among SCPs and is also close to that of well-defined poly(3-alkylthiophene). [Pg.201]

Usta H, Lu G, Facchetti A, Marks TJ (2006) Dithienosilole- and dibenzosilole-thiophene copolymers as semiconductors for organic thm-film transistors. J Am Chem Soc 128 9034— 9035... [Pg.109]


See other pages where Dithienosilole-thiophene copolymers is mentioned: [Pg.673]    [Pg.723]    [Pg.407]    [Pg.158]   
See also in sourсe #XX -- [ Pg.673 , Pg.674 ]




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