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Contour currents

Turbidity and contour currents resuspend and transport the sediments that lie on the continental margin. These sediments are redeposited when the currents weaken. [Pg.364]

In the case of the turbidity currents, this redistribution usually occurs along the foot of the continental slope and is largely responsible for the accumulation of sediments in the continental rise. The resuspension of particles by contour currents can also maintain permanent nepheloid layers as shown in Figure 13.10. [Pg.367]

Contour currents Water currents that flow along the foot of the continental slope. [Pg.871]

When a molecule rotates, IlypcrChem abandons the current contour map because it is no longer valid and you must explicitly request a new contour map via the Graph check box. [Pg.241]

The grid of computed values for the variable used in defining the contour is a grid of exactly the size of the current working area subdivided evenly such that the total number of grid points is as the user specifies. [Pg.241]

Different processes like eddy turbulence, bottom current, stagnation of flows, and storm-water events can be simulated, using either laminar or turbulent flow model for simulation. All processes are displayed in real-time graphical mode (history, contour graph, surface, etc.) you can also record them to data files. Thanks to innovative sparse matrix technology, calculation process is fast and stable a large number of layers in vertical and horizontal directions can be used, as well as a small time step. You can hunt for these on the Web. [Pg.305]

The real design must consider design criteria derived from the physical constraints of the chosen site and the current operating procedures. In this exercise, the site must be examined to list the features of the site, which will affect the plant layout. These will include the contour of the site and the location of the following ... [Pg.77]

Continuous Anodes Consist of considerable lengths of relatively flexible copper-cored material which can be contoured to suit restricted spaces or to distribute current in a localised fashion. Typically they may be used in water boxes at a non-ferrous tubeplate/ferrous water box junction. Anode terminations pass through the water box via insulating entry points and the anodes are supported on insulators within the box. Anode/cathode distance must be such as to prevent the anode becoming engulfed in calcareous deposit that forms on the cathode. [Pg.218]

Figure 10. Yield Contours for Americium Extraction vs s/m Ratio for 1, 2, and 3-Stage Counter-Current Extraction. Salt Composition 30 m/o MgCl2, 35 m/o NaCl,... Figure 10. Yield Contours for Americium Extraction vs s/m Ratio for 1, 2, and 3-Stage Counter-Current Extraction. Salt Composition 30 m/o MgCl2, 35 m/o NaCl,...
The experimental set-up usually utilizes a piezoelectric tripod as a support of the tip (Fig. 5.36). This is movable vertically and laterally over the examined surface the vertical distance is fixed by a feedback loop to a constant tunnelling current at each point of the scan. The contours of the surface are thus visualized by voltage changes needed to move the piezoelectric tripod to a desired position. [Pg.351]

Figure 4.6 Left STM image of a stoichiometric 1 x 1 Ti02(l 1 0) surface, 14A x 14 A. Sample bias + 1.6 V, tunneling current 0.38 nA. The inset shows a ball-and-stick model of the unrelaxed 1 x 1 Ti02(l 1 0) surface. Rows of bridging oxygen atoms are labeled A and rows of fivefold coordinated titaniums B . Right contour plots of [0 1 l]-averaged charge densities associated with electron states within... Figure 4.6 Left STM image of a stoichiometric 1 x 1 Ti02(l 1 0) surface, 14A x 14 A. Sample bias + 1.6 V, tunneling current 0.38 nA. The inset shows a ball-and-stick model of the unrelaxed 1 x 1 Ti02(l 1 0) surface. Rows of bridging oxygen atoms are labeled A and rows of fivefold coordinated titaniums B . Right contour plots of [0 1 l]-averaged charge densities associated with electron states within...
Figure 4.7b shows a close-up of Figure 4.7a, a 300 pA constant It contour, which has a corrugation of approximately 100 pm and is located approximately 300 pm from the 02c surface atoms. These values disagree quantitatively with experimental STM results at the same tunneling conditions on two accounts. First, a set point of It= 300 pA is not a particularly large value for constant current STM imaging, and... [Pg.107]

One has to keep in mind that STM images show contours of constant tunnel probability rather than height contours directly. Nevertheless, for simple cases such as a metal surface, both quantities are closely related to each other. The dependence of the tunnel current IT on the tunnel voltage UT and on other parameters is given for the ideal case in Eq. (5.1) ... [Pg.121]

Figure 8.7 Simultaneously recorded 80A x 150A STM and NC-AFM images of Ti02(l 1 0). (a) A current map represents the STM image. Because the tip is oscillating during NC-AFM measurements, the time-averaged current is recorded. The current map is color contoured so that OHb appear as broad, red spots and Ob-vacs appear as... Figure 8.7 Simultaneously recorded 80A x 150A STM and NC-AFM images of Ti02(l 1 0). (a) A current map represents the STM image. Because the tip is oscillating during NC-AFM measurements, the time-averaged current is recorded. The current map is color contoured so that OHb appear as broad, red spots and Ob-vacs appear as...
The scanning tunneling microscope uses an atomically sharp probe tip to map contours of the local density of electronic states on the surface. This is accomplished by monitoring quantum transmission of electrons between the tip and substrate while piezoelectric devices raster the tip relative to the substrate, as shown schematically in Fig. 1 [38]. The remarkable vertical resolution of the device arises from the exponential dependence of the electron tunneling process on the tip-substrate separation, d. In the simplest approximation, the tunneling current, 1, can be simply written in terms of the local density of states (LDOS), ps(z,E), at the Fermi level (E = Ep) of the sample, where V is the bias voltage between the tip and substrate... [Pg.213]


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See also in sourсe #XX -- [ Pg.344 ]




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