CMP for More than Moore devices

Chemical mechanical polishing/planarization (CMP) was developed in the late 1980s in order to overcome problems with multi-layer metallization. The increasing topography as a result of stacked metal lines led to depth-of-focus problems during 

Advances in Cbomkal Medianical Planarization (CMP). littp //dx.d(n.oi n0.101 iffi978-0 08 100165 3.0001S  

Source Redrawn in b/w from FIRS More-Than-Moore White Paper, after a diagram originally published by the European Commission, used with kind permission. 

In order to overcome the identified challenges, advanced slurries, pads and cleaning chemistries have been developed by the consumables manufacturers. 

Only a few years after the introduction of CMP for the fabrication of More Moore devices, the first MEMS devices were demonstrated by Sandia labs, which employed pofishing for poly-Si layer planarization (Sniegowski, 1996). Later, CMP was adopted for the fabrication of many More than Moore devices. 

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