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Chemical vapor deposition diagram

Koh J, Ferlauto AS, Rovira PI, Wronski CR, Collins RW (1999) Evolutionary phase diagram for plasma enhanced chemical vapor deposition of silicon thin films from hydrogen diluted silane. Appl Phys Lett 75 2286-2289... [Pg.513]

Fig. 3.6 Schematic diagram of hot-filament chemical vapor deposition system (after Guo and Chen 2007a)... Fig. 3.6 Schematic diagram of hot-filament chemical vapor deposition system (after Guo and Chen 2007a)...
For all samples, ohmic contacts were formed by lift-off of e-beam deposited Ti (200 A)/A1 (1000 A)/Ni (400 A)/Au (1200 A) subsequently annealed at 850°C for 45 s under a flowing N2 ambient. The surface was encapsulated with 2000 A of plasma enhanced chemical vapor deposited SiNx at SOO C. Windows in the SiN were opened by dry etching and 100 A of Pt deposited by e-beam evaporation for Schottky contacts. The final metal was e-beam deposited Ti/Au (200 A/1200 A) interconnection contacts. Figure 5.20 presents a diagram of the structure of the device and a bird s-eye view. [Pg.184]

Figure 5. Pressure and temperature conditions of the diamond synthesis (a) shock wave production of diamond (b) high temperature, high pressure regime for the synthesis of diamond (c) catalytic region for diamond formation (d) chemical vapor deposited diamond and (e) transformation of Cjo into diamond. The most recent review of the P, T phase diagram of carbon can be found elsewhere [151]. Figure 5. Pressure and temperature conditions of the diamond synthesis (a) shock wave production of diamond (b) high temperature, high pressure regime for the synthesis of diamond (c) catalytic region for diamond formation (d) chemical vapor deposited diamond and (e) transformation of Cjo into diamond. The most recent review of the P, T phase diagram of carbon can be found elsewhere [151].
In our lab we transformed the conventional textiles into electrically conductive materials by applying very thin layers of conjugated polymer. For this purpose, an efficient coating technique called chemical vapor deposition (CVD) was used to coat the textile substrates with conjugated polymer, poly(3,4-ethylenedioxythiophene) (PEDOT), in the presence of a suitable oxidant. A schematic diagram of all steps involved in this coating process is shown in Fig. 28.8. [Pg.671]

Figure 28.8 Schematic diagram of chemical vapor deposition process and all steps involved in this method [30]. Figure 28.8 Schematic diagram of chemical vapor deposition process and all steps involved in this method [30].
Figure 1.3 Schematic diagram of microwave-plasma-assisted chemical vapor deposition (MPACVD) diamond growth system. (From Ref. 11.)... Figure 1.3 Schematic diagram of microwave-plasma-assisted chemical vapor deposition (MPACVD) diamond growth system. (From Ref. 11.)...
Micro-ZNanofabrication for Chemical Sensors, Fig. 5 Schematic diagram showing the processes involved in chemical vapor deposition, transport to the... [Pg.1263]

Figure 5.8 Schematic diagrams of two ways in which fihns form on solid surfaces, (a) Formation of a compound layer by chemical reaction between the atmosphere and the substrate, which is illustrated here for the oxidation of a metal, (b) Formation of a surface layer by chemical vapor deposition, which is illustrated here for the condensation of Mi vapor onto a M2 substrate. Figure 5.8 Schematic diagrams of two ways in which fihns form on solid surfaces, (a) Formation of a compound layer by chemical reaction between the atmosphere and the substrate, which is illustrated here for the oxidation of a metal, (b) Formation of a surface layer by chemical vapor deposition, which is illustrated here for the condensation of Mi vapor onto a M2 substrate.
Figure 4 Atomic C-H-O diamond deposition phase diagram with the diamond domain. The diagram comprises deposition experiments from over 25 references [24]. (Reproduced from Diamond and Related Materials, 1, Bachmann, R K., et al. Towards a general concept of diamond chemical vapor deposition, pp. 1—12. Copyright 1991, with permission from Elsevier Science.)... Figure 4 Atomic C-H-O diamond deposition phase diagram with the diamond domain. The diagram comprises deposition experiments from over 25 references [24]. (Reproduced from Diamond and Related Materials, 1, Bachmann, R K., et al. Towards a general concept of diamond chemical vapor deposition, pp. 1—12. Copyright 1991, with permission from Elsevier Science.)...
Figure 7-31. Measured and calculated active-to-passive transitions for SiC oxidation. Results for SiC produced by various processes are shown chemically-vapor-deposited (CVD), pressureless sintered (PLS), single crystal (SC), and hot-pressed (HP). /oa W) refers to the active to passive transition calculated using Wagner s approach whereas Poj(I) refers to the lower limit of the active to passive transition calculated from the volatility diagram. (Adapted from Narushima et al., 1997.)... Figure 7-31. Measured and calculated active-to-passive transitions for SiC oxidation. Results for SiC produced by various processes are shown chemically-vapor-deposited (CVD), pressureless sintered (PLS), single crystal (SC), and hot-pressed (HP). /oa W) refers to the active to passive transition calculated using Wagner s approach whereas Poj(I) refers to the lower limit of the active to passive transition calculated from the volatility diagram. (Adapted from Narushima et al., 1997.)...
Figure 3.4 A schematic diagram of a parallel plate design of a plasma-enhanced chemical vapor deposition (PECVD) system used to synthesize nanowires. Figure 3.4 A schematic diagram of a parallel plate design of a plasma-enhanced chemical vapor deposition (PECVD) system used to synthesize nanowires.
Since the reports using the catalytic chemical vapor deposition (CCVD) method for the synthesis of N-CNTs published in 1997 by Yudasaka et al. [32] and Sen et al. [33] and by Terrenes et al. in 1999 [34], CCVD has become the most common and reliable technique to synthesize CNTs and N-CNTs due to its simplicity and scalability. Indeed, the CCVD method requires only a furnace, a tubular reactor, a reactive gas mixture, and an appropriate catalyst. In addition, CCVD can be carried out in a continuous mode and at a relatively low temperature compared with the arc discharge and laser ablation ones. The product is extremely pure and, thus, additional purification is not required, which represents a net gain for the cost-effectiveness of the process. A schematic diagram of the conventional fixed-bed CVD synthesis setup is shown in Figure 9.5. [Pg.280]

Figure 2 Schematic diagram of a chemical vapor deposition (CVD) system for the growth of SiC. Figure 2 Schematic diagram of a chemical vapor deposition (CVD) system for the growth of SiC.
A schematic diagram of the procedure for fabricating the BDD-MDA electrode is shown in Fig. 11.1. A Si(lOO) surface was masked with patterned photoresist and etched with a mixture of HF, HNO3 and H2O. The structured silicon surface was seeded with 10-nm diamond powder. BDD was deposited using a microwave plasma-assisted chemical vapor deposition system. The details of the diamond deposition have been reported elsewhere [7]. After the deposition of diamond, polyimide varnish was spin-coated on the diamond surface. The polyimide layer was... [Pg.239]

Figure 12.5 A schematic diagram of some of the major elements of a typical low-pressure chemical vapor deposition system. Note that the entire process is typically contained within a safety enclosure because many of the reactants as process gases are either flammable or toxic. A toxic gas detector scans the interior of the enclosure, especially around the gas piping, for leaks. The scrubber reacts the source materials that are left over after passing through the reactor tube to render them harmless. Typically the valves for all sources are operated electronically so that the user does not need to open the safety enclosure except to load substrates on the susceptor. The system shown here includes a single substrate on a tilted susceptor. Batch processes are similar except in the arrangement of substrates in the reactor tube. Other reactor tube designs are also used. More specific reaction examples are given in Section 12.8. Figure 12.5 A schematic diagram of some of the major elements of a typical low-pressure chemical vapor deposition system. Note that the entire process is typically contained within a safety enclosure because many of the reactants as process gases are either flammable or toxic. A toxic gas detector scans the interior of the enclosure, especially around the gas piping, for leaks. The scrubber reacts the source materials that are left over after passing through the reactor tube to render them harmless. Typically the valves for all sources are operated electronically so that the user does not need to open the safety enclosure except to load substrates on the susceptor. The system shown here includes a single substrate on a tilted susceptor. Batch processes are similar except in the arrangement of substrates in the reactor tube. Other reactor tube designs are also used. More specific reaction examples are given in Section 12.8.

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