Chemical mechanical planarization ceria

Merrick D, Santora B, Her B, Frink S. An Investigation of ceria-based slurries exhibiting reverse-prestonian behavior. Proceedings 11th International Symposium on Chemical Mechanical Planarization 2006. 

Ceria (Ce02) is the most widely used compoimd of cerium. The main application of ceria is as a polishing compound, e.g., chemical-mechanical planarization (CMP ). It is used to produce high-quality optical surfaces (Fig. 5.3). 

Kim, D.-H., Kang, H.-G., Kim, S.-K., Paik, U., Park, J.-G., 2006. Reduction of large particles in ceria slurry by aging and selective sedimentation and its effect on shallow trench isolation chemical mechanical planarization. Jpn. J. Appl. Phys. 45, 6790. 

Kim, S.K., Lee, S., Paik, U., Katoh, T., Park, J.G., 2003. Influence of the electrokinetic behaviors of abrasive ceria particles and the deposited plasma-enhanced tetraethylorthosiU-cate and chemically vapor deposited S13N4 films in an aqueous medium on chemical mechanical planarization for shallow trench isolation. J. Mater. Res. 18, 2163—2169. 

Yuichi Y, Takaaki K, Shunichi S, Keiichi M, Yasuaki I, Shinji T, Naoki T. The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry. Mater Res Soc S5nnp Proc 2005 867 W3.5.1-W3.5.6. 

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