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Charge spectroscopy

Herberholz, R. Igalson, M. Schock, FI. W. 1998. Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopy. J. Appl. Phys. 83 318-325. [Pg.235]

A. Ermolieff, S. Deleonibus, S. Marthon, B. Blanchard, and J. Piaguet, Study of Si02/Si Interface States in Mos Devices by Surface Charge Spectroscopy. Application to Rapid Thermal Nitridation of Silicon, J. Electron Spectros. Relat. Phenom. 67, 409-416 (1994). [Pg.57]

Another TL application is the analysis of the electronics states in materials, which are defined by both material and technology of its production. For example, for PS different contact methods to define the electronics states in metal/PS stmctures have been aheady applied thermally stimulated depolarization currents (TSDC) and thermally stimulated current (TSC) (Ciurea et al. 1998 Anastasiadis and Triantis 2000 Brodovoy et al. 2002), optical charging spectroscopy (OCS) (Ciurea et al. 2000), and deep-level transient spectroscopy (DLTS) (Pincik et al. 1999 Tretyak et al. 2003). The mentioned methods determine the parameters of traps related with both PS material and metal/PS interface and often differ from results obtained from TL experiments. Two advantages of the TL method are that it is contactless and it can reveal the energy distribution of both bulk and/or surface states. The obvious drawback of TL is that it can only be applied to luminescent materials. [Pg.866]

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-... Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...
So far we have exclusively discussed time-resolved absorption spectroscopy with visible femtosecond pulses. It has become recently feasible to perfomi time-resolved spectroscopy with femtosecond IR pulses. Flochstrasser and co-workers [M, 150. 151. 152. 153. 154. 155. 156 and 157] have worked out methods to employ IR pulses to monitor chemical reactions following electronic excitation by visible pump pulses these methods were applied in work on the light-initiated charge-transfer reactions that occur in the photosynthetic reaction centre [156. 157] and on the excited-state isomerization of tlie retinal pigment in bacteriorhodopsin [155]. Walker and co-workers [158] have recently used femtosecond IR spectroscopy to study vibrational dynamics associated with intramolecular charge transfer these studies are complementary to those perfomied by Barbara and co-workers [159. 160], in which ground-state RISRS wavepackets were monitored using a dynamic-absorption technique with visible pulses. [Pg.1982]

Kovalenko S A, Ernsting N P and Ruthmann J 1996 Femtosecond hole-burning spectroscopy of the dye DCM in solution the transition from the locally excited to a charge-transfer state Chem. Phys. Lett. 258 445-54... [Pg.1996]

Kirmaier C and Holten D 1988 Subpicosecond spectroscopy of charge separation in Rhodobacter capsulatus reaction centers Isr. J. Chem. 28 79-85... [Pg.1999]

Ding C F, Wang X B and Wang L S 1998 Photoelectron spectroscopy of doubly charged anions intramolecular Coulomb repulsion and solvent stabilization J. Phys. Chem. A 102 8633... [Pg.2401]

Wang C, Mohney B K, Williams R, Hupp J T and Walker G C 1998 Solvent control of vibronic coupling upon intervalence charge transfer excitation of (NC)gFeCNRu(NH3)g- as revealed by resonance Raman and near-infrared absorption spectroscopies J. Am. Chem. Soc. 120 5848-9... [Pg.2995]

A more recent, and superior, type of detector, which also benefits from the multiplex advantage, is the charge-coupled device (CCD). The CCD, as used for spectroscopy, has been developed from the CCD detector used in a camcorder. [Pg.63]

The first quantitative model, which appeared in 1971, also accounted for possible charge-transfer complex formation (45). Deviation from the terminal model for bulk polymerization was shown to be due to antepenultimate effects (46). Mote recent work with numerical computation and C-nmr spectroscopy data on SAN sequence distributions indicates that the penultimate model is the most appropriate for bulk SAN copolymerization (47,48). A kinetic model for azeotropic SAN copolymerization in toluene has been developed that successfully predicts conversion, rate, and average molecular weight for conversions up to 50% (49). [Pg.193]

In pyrroelecttic devices, a charge is developed across the film in response to heating and such devices may serve as k-detectors (see Infrared TECHNOLOGY AND RAMAN SPECTROSCOPY). Pie2oelecttic appHcations are promising as sound detectors, because for these, a charge is developed across the film in response to pressure. A review is available (74). [Pg.536]

Sihcon charge coupled devices (CCDs), commonly used in soHd-state video cameras and in research appHcations, are being appHed to low light level spectroscopy appHcations. The main advantage of area array CCDs over linear photodiode detectors is the two-dimensional format, which provides simultaneous measurements of spatial and spectral data. [Pg.398]


See other pages where Charge spectroscopy is mentioned: [Pg.56]    [Pg.56]    [Pg.151]    [Pg.56]    [Pg.56]    [Pg.151]    [Pg.175]    [Pg.309]    [Pg.805]    [Pg.1199]    [Pg.1249]    [Pg.1865]    [Pg.1968]    [Pg.2749]    [Pg.2985]    [Pg.767]    [Pg.177]    [Pg.181]    [Pg.158]    [Pg.307]    [Pg.176]    [Pg.162]    [Pg.510]    [Pg.444]    [Pg.449]    [Pg.438]    [Pg.197]    [Pg.203]    [Pg.314]    [Pg.321]    [Pg.325]    [Pg.177]    [Pg.833]   
See also in sourсe #XX -- [ Pg.241 , Pg.245 , Pg.252 , Pg.257 ]

See also in sourсe #XX -- [ Pg.574 , Pg.575 , Pg.576 ]




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