CF4-H2 plasmas

Figure 25, Emission intensity from F atoms X = 703.7 nm) and Ar atoms (A,X = 750 nm) in a CF4/H2 plasma as a function 0/H2 concentration. The ratio ( ) of F/Ar emissions is also shown. (Reproduced with permission from Ref 115.)...

Figure 9. Dependence of silicon and silicon dioxide etch rates on the percentage of Hz in CF4-H2 plasmas, (seem is standard cubic centimeters per minute.) (Reproduced with permission from reference 118. Copyright 1979 The Electrochemical Society, Inc.)...

Fig. 6. Intensity of CF + as a function of electron energy in CHF(, CF4 and CF4-H2 plasmas (reprinted with permission from J. Appl. Phys. 50 (1979) 6594 [15]).

Fig. 14. Fluorocarbon film thickness on Si and Si etching rate as a function of the gas mixture in CF4—H2 plasmas (reprinted with permission from Mat. Res. Soc. Symp. Proc., 98 (1987) 229 [64]).

Numerical Model of Plasma,-Chemical Etching of Silicon in CF4/H2 Plasma 45... 

The simulation of silicon etching process in CF4/H2 plasma allows to conclude the following results. 

R. J. Graham, J. B. Posthill, R. A. Rudder, and R. J. Markunas, Cathodolumines-cence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures, Appl. Phys. Lett, 59(19) 2463-2465... 

Figure 8. PM-RAIRS andXPS (inset) of superhydrophobic coatings deposited with scanning CF4/H2/He plasma (rf power = 300 W). The number of plasma treatments is indicated in the figure. (9)...

The effect of multicomponent plasma kinetics on the production and mass transfer of active particles was studied on example of radial flow plasma-chemical etching reactor. The construction dimensions are used as in [2]. The gas flow direction to the center of reactor was examined. The calculations have been done for gas flow rate under normal conditions Q = 200 cm /min. The pressure in etching chamber of reactor was equal to p = 0.5 torr. The temperature of reactor walls and wafer were T-u, = Tg = 300 K. The average electron density was assumed equal to rie = 6 x 10 cm. The percentage fraction in CF4/H2 feed gas mixture varied in the range 0 - 90 %. 

Grigoryev, Y.N., Gorobchuk, A.G. Specific Features of Intensification of Silicon Etching in GE4/O2 Plasma. Russian Microelectronics 36, 321-332 (2007) Grigoryev, Y.N., Gorobchuk, A.G. Simulation of the polymerization process on a silicon surface under plasma-chemical etching in CF4,/H2- Journal of Surface Investigation X-ray, Synchrotron and Neutron Techniques 9, 184-189 (2015)... 

Chen (1996) studied free radical formation on cotton and wool fibres treated with low temperature plasmas (LTP) of O2, N2, Ar, H2, CO and CF4 at the RF generator, with a power of 300 W and pressures between 0.3... 

---