CdS, CdSe and CdTe

Cadmium sulfide (CdS), 2.4 eV bandgap, is one of the most widely studied non-oxide semiconductors. For a semiconductor irradiated by photons with energy equal to or greater than its bandgap, an electron from the valence band jumps to the conduction band leaving a positively charged hole behind in the valance band for CdS this is expressed as 

CdSe photoanodes also suffer from photocorrosion [12,13,106,107]  

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The intermetallic compounds with Group 16 (VIA) elements including CdS, CdSe, and CdTe have interesting semiconductor properties for photoconductors, photovoltaic cells, and ir windows. Cadmium sulfide is widely used as a phosphor in television tubes. 

Non-aqueous electrolytes have been used for the preparation of CdS, CdSe, and CdTe nanowire arrays by dc electrodeposition in porous AAO templates of various pore diameters [155, 156]. For instance, CdSe NW arrays with uniform wurtzite crystal structure were fabricated from a non-aqueous DMSO solution containing CdCl2 and elemental Se. The NWs were shown to be of uniform length (2-15 p.m) and diameter (about 20 nm). The c-axis, [00.2], of the grown... 

Quantum dots used in liquid crystal systems (ranging in size from a few to tens of nanometers) are usually from the II-VI group, and include CdS, CdSe, and CdTe capped with trioctylphosphine/trioctylphosphine oxide (TOP/TOPO) [101-103], CdS as well as CdTe stabilized with thiols [104], and CdSe protected with amines [105]. 

The introduction in 1993 of a high temperature preparation method using organic solvents constituted an important step towards the fabrication of monodisperse CdS, CdSe, and CdTe NCs.14 As demonstrated in classical studies by LaMer and Dinegar,43 the synthesis of monodisperse colloids via homogeneous nucleation requires a temporal separation of nucleation and growth of the seeds. The LaMer plot (Fig. 5.4) is very useful to illustrate the separation of nucleation and growth by means of a nucleation burst. 

The trend in metal h.f.s. in a series of lattices varying in anion electronegatively is opposite to earlier examples. In CdS, CdSe, and CdTe lattices, d( Co) increases as the covalency increases. Covalent bonding in the series [CoPg] ", [CoBre] , and [Colg] has been studied by measuring the ligand s.h.f.s. in a series of host lattices (714). As expected, delocalization of the electrons increases as the covalency... 

The photoetching works well for typically photocorrosive semiconductors, such as CdS, CdSe, and CdTe. The photocorrosion of other compound semiconductors have been also examined, for example, CuInsSs, some other ternary semiconductors, InSe, MoSe2, and WSc2, and so forth [10-23]. 

Comparisons between the second-order mean hyperpolarizabilities (divided by 10 ) of CdS, CdSe, and CdTe clusters computed at the HF/aug-cc-pVDZ-PP level of theory... 

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