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Bromine silicon etching

Reactive fibers, 9 486-489 Reactive flame retardants, 11 474-479 brominated, ll 475-477t Reactive gases, 13 456 Reactive groups, types of, 9 178 Reactive hot melt butyl sealants, 22 44 Reactive hot melt polyurethanes, 22 37-38 Reactive hot melt silicones, 22 35 Reactive ion-beam etching (RIBE), 22 184 Reactive ion etching (RIE), 20 278 22 183 of lotus effect surfaces, 22 120 Reactive lead alloys, 14 779 Reactive liquid metal infiltration process, 16 168... [Pg.789]

Titanium can be etched in fluorine-, chlorine-, or bromine-containing gases, because all the halides are volatile. Chlorides and bromides have been studied to a great extent since they result in high selectivity over silicon- containing films, and do not promote staining on gold (77). [Pg.245]

Figure A3.10.8 schematically depicts a Si(lOO) surface (a) being etched to yield a rough surface (b) and a more regular surface (c). The surfaces shown here are seen to consist of steps, terraces and kinks, and clearly have a three-dimensional character, rather than the two-dimensional character of an ideally flat, smooth surface. The general etching mechanism is based on the use of halogen molecules, the principal etchants used in dry etching. Upon adsorption on silicon at room temperature, Br2 dissociates to form bromine atoms, which react with surface silicon atoms. Then, if an external source of energy is provided, for example by heating Si... Figure A3.10.8 schematically depicts a Si(lOO) surface (a) being etched to yield a rough surface (b) and a more regular surface (c). The surfaces shown here are seen to consist of steps, terraces and kinks, and clearly have a three-dimensional character, rather than the two-dimensional character of an ideally flat, smooth surface. The general etching mechanism is based on the use of halogen molecules, the principal etchants used in dry etching. Upon adsorption on silicon at room temperature, Br2 dissociates to form bromine atoms, which react with surface silicon atoms. Then, if an external source of energy is provided, for example by heating Si...
Bressers PMMC, Plakman M, Kelly JJ (1996) Etching and electrochemistry of silicon in acidic bromine solutions. J Electroanal Chem 406 131-137 Carraro C, Maboudian R, Magagnin L (2007) Metallization and nanostructuring of semiconductor surfaces by galvanic displacement processes. Surf Sci Rep 62 499-525 Chabal YJ, Harris AL, Raghavachari K, Tully JC (1993) Inlfared spectroscopy of H-terminated silicon surfaces. Int J Mod Phys B 7 1031-1078... [Pg.579]


See other pages where Bromine silicon etching is mentioned: [Pg.289]    [Pg.289]    [Pg.1074]    [Pg.3831]    [Pg.64]    [Pg.649]    [Pg.934]    [Pg.935]    [Pg.663]    [Pg.259]    [Pg.453]    [Pg.611]    [Pg.110]    [Pg.935]    [Pg.936]    [Pg.529]    [Pg.480]    [Pg.1487]    [Pg.630]    [Pg.521]    [Pg.522]    [Pg.273]    [Pg.339]    [Pg.507]    [Pg.507]    [Pg.468]   
See also in sourсe #XX -- [ Pg.414 ]




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