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Brightness enhancement film

Consider a brightness-enhancing film (BEF) shown in Figure 11.36. Calculate the incident angular region within which the incident fight will be reflected from the bottom surface of the BEF by total internal reflection. [Pg.409]

Because Nitto Denko was the developer of polarizers, we became the hub for our customers to collect their needs and act as the center of novel product creation. Our proposal to integrate the polarizer with a brightness enhancement film, which is one of the comptMients of the backlight, contributed to the man-hour reductimi of LCD development of low power consumption devices [6, 7]. [Pg.86]

Film Preparation for Electron Microscopy. (SN), N P Cl, (NPCl ), DMDA, (DMDA), TCDU, and (TCDU) were all prepared for examination by use of a collodion stripping technique or by sub-strate dissolution, after Pt, C, or Au coating to enhance film strength and contrast. A Jeol JEM lOOB transmission electron microscope was used in both bright field and diffraction modes. [Pg.91]

Optically active films used to polarize light or enhance brightness in a liquid crystal display. [Pg.527]

The most common species used with SIMS sources are Ar+, 02+, 0 , and N2+. These ions and other permanent gas ions are formed easily with high brightness and stability with the hollow cathode duoplasmatron. Ar+ does not enhance the formation of secondary ions but is popular in static SIMS, in which analysis of the undisturbed surface is the goal and no enhancement is necessary. 02+ and 0 both enhance positive secondary ion count rates by formation of surface oxides that serve to increase and control the work function of the surface. 02+ forms a more intense beam than 0 and thus is used preferentially, except in the case of analyzing insulators (see Chapter 11). In some cases the sample surface is flooded with 02 gas for surface control and secondary ion enhancement. An N2+ beam enhances secondary ion formation, but not as well as 02+. It is very useful for profiling and analysis of oxide films on metals, however. It also is less damaging to duoplasmatron hollow cathodes and extends their life by a factor of 5 or more compared to oxygen. [Pg.196]

We point out that another partial explanation for the experimentally observed red-shift is the combination of excitation and emission factors that enter the total enhancement expression. Since a fluorophore s fluorescence peak is red-shifted from its absorption peak, it is likely that the point of maximum brightness will also require some compromise between excitation and emission enhancement. This explanation has been given by Rothberg for fluorescence enhancements from random Ag colloidal films and is reminiscent of the optimum position of the LSPR... [Pg.104]

The electromagnetic nature of surface-enhanced Raman scattering (SERS) and plasmon-enhanced fluorescence (PEF) involves resonant excitations of localized plasmons (LPs) in the near-field of nanosized noble metal particles or films, coupling them with surrounding scatterers and detection of their secondary emission in the far field. Employment of these plasmonic phenomena are proposed, for example, as a new approach to increase brightness of heavily labeled macromolecules [1]. [Pg.168]

Introduction of CFx thin film on top of the ITO anode as HTL via plasma polymerization of CHF3 can also enhance device performance of PFO-based PLED, as reported by us [79]. At the optimal C/F atom ratio using the radio frequency power 35 W (see Table 2) as determined by X-ray photoelectron spectrometer, the device performance based on the ITO/CFx(35 W)/PFO/CsF/Ca/Al configuration is optimal having maximum current efficiency of 3.1 cdA 1 and maximum brightness of8400 cdm 2 much better than 1.3 cd A-1 and 1800 cd m-2 for the device with PEDOT PSS as HTL. The improved device performance was attributed to a better balance between hole and electron fluxes because the CFx (35 W) layer possesses an Ip value of 5.6 eV (see Table 2), as determined by ultraviolet photoelectron spectroscopy data, and therefore causes a lower hole-injection barrier to the PFO layer (0.2 eV) than that of 0.7 eV for PEDOT PSS. [Pg.78]


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