Bipolar junction transistors power

Zhang, J., et al., A High Current Gain 4H-SiC NPN Power Bipolar Junction Transistor, IEEE Electron Device Letters, Vol. 24, No. 5, May 2003, pp. 327-329. 

Agarwal, A. K., et al., Large Area, 1.3 kV, 17A, Bipolar Junction Transistors in 4H-SiC, Proc. of the 15th Inti. Symposium on Power Semiconductor Devices and ICs. ISPSD 03, Cambridge, England, April 14-17, 2003, pp. 105-108. 

MOSFETs. The metal-oxide-semiconductor field effect transistor (MOSFET or MOS transistor) (8) is the most important device for very-large-scale integrated circuits, and it is used extensively in memories and microprocessors. MOSFETs consume little power and can be scaled down readily. The process technology for MOSFETs is typically less complex than that for bipolar devices. Figure 12 shows a three-dimensional view of an n-channel MOS (NMOS) transistor and a schematic cross section. The device can be viewed as two p-n junctions separated by a MOS capacitor that consists of a p-type semiconductor with an oxide film and a metal film on top of the oxide. 

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