Bilayer Bipolar FETs

Ij = drain current Vjs = drain-source voltage Vgs = gate-source voltage. (Reprinted with permission from Ref [43]). 

In the bilayer architecture, depending on the device configuration and on the materials used, charge accumulation and transport of holes and electrons can occur in different layers. However, at least one of the two accumulation zones will form at the interface between the two organic layers and therefore charge transport will depend on the quality of this interface. In bilayer devices realized by evaporation. 

This is the reason why almost all the examples of bilayer ambipolar transistors are based on sublimed small molecules thin films. There are very few reports on bipolar bilayer transistors based on solution-processed semiconductors [45, 46]. 

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