Silicon band-gap

Due to its wide band gap, silicon carbide is also an interesting semiconductor for high-temperature applications [193]. In order to get monocrystalline... 

Boron of 99.9999% purity has been produced and is available commercially. Elemental boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium. 

Semiconductors may also be made from a maferial which is normally an insulator by infroducing an impurify, a process known as doping. Figure 9.9 shows fwo ways in which an impurify may promote semiconducting properties. In Figure 9.9(a) fhe dopanf has one more valence election per atom fhan fhe hosf and confribufes a band of filled impurify levels 1 close to fhe conduction band of fhe hosf. This characterizes an n-fype semiconductor. An example is silicon (KL3s 3p ) doped wifh phosphoms (KL3s 3p ), which reduces fhe band gap to abouf 0.05 eY Since kT af room femperafure is abouf 0.025 eY the phosphoms... 

Alternatively, as in Figure 9.9(b), a dopant with one valence electron fewer than the host contributes an impurity band 1 which is empty but more accessible to electrons from the valence band. An example of such a p-type semiconductor is silicon doped with aluminium KL3s 3p ) in which the band gap is about 0.08 eY... 

Silicon is closer to carbon, and germanium is closer to lead, in the periodic table. We expect the band gap in silicon to be larger than that in germanium, so it makes sense that lower-energy radiation can generate electrical conductivity in germanium than in silicon. 

The relatively large band gaps of silicon and germanium limit their usefulness in electrical devices. Fortunately, adding tiny amounts of other elements that have different numbers of valence electrons alters the conductive properties of these solid elements. When a specific impurity is added deliberately to a pure substance, the resulting material is said to be doped. A doped semiconductor has almost the same band stmeture as the pure material, but it has different electron nonulations in its bands. 

C21-0013. Draw band gap diagrams (review Section 10.7 if necessary) illustrating that silicon is a... 

Semiconductors have a considerably smaller band gap (e.g. silicon 1.17 eV). Their conductivity, which is zero at low temperatures but increases to appreciable values at higher temperatures, depends greatly on the presence of impurities or, if added advertently, dopants. This makes it possible to manipulate the band gap and tune the properties of semiconductors for applications in electronic devices [C. Kit-tel. Introduction to Solid State Physics (1976), Wiley Sons, New York N. Ashcroft and N.D Mermin, Solid State Physics (1976), Saunder College]. 

The deposition takes place from HTeOs and cadmium-EDTA complex solutions at a potential whereat, whilst Te is deposited from HTeOs under a diffusion-limited condition, the Cd-EDTA complex ion is not reduced to metallic Cd. The first step is the dark deposition of one monolayer of elemental Te on the p-Si substrate (Fig. 4.11a, i). After completion of this step, as specified by measuring the charge passed, the electrode is illuminated by light with energy higher than the band gap energy of silicon for a limited time. Then conduction band electrons are... 

Table 1. Energy band gaps of diamond and silicon calculated by FLAPW-LDA and FLAPW-SIC schemes. The experimental values [34] are also shown. Units are in eV.

In addition to the generation of platelets, hydrogenation of silicon also induces electronic deep levels in the band gap. As in the case of platelet formation, these defects are considered to be unrelated to either plasma or radiation damage because they can be introduced with a remote hydrogen plasma. Comparison of depth distributions and annealing kinetics of the platelets and gap states has been used to a limited extent to probe the relationship among these manifestations of H-induced defects. 

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