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Supra-band edge reactions

As indicated in Figure 1, if a semiconductor is biased to depletion in contact with an electrolyte, a photocurrent can be generated upon illumination. This occurs because the photo-excited majority carriers are driven by the electric field in the depletion layer to the counter electrode and minority carriers migrate to the interface where they are trapped at the band edge. Nozik has recently speculated that hot minority carrier injection may play a role in supra-band edge reactions.(19)... [Pg.87]

Supra-Band-Edge Reactions at Semiconductor-Electrolyte Interfaces... [Pg.253]

See other pages where Supra-band edge reactions is mentioned: [Pg.253]    [Pg.255]    [Pg.257]    [Pg.259]    [Pg.261]    [Pg.263]    [Pg.265]    [Pg.253]    [Pg.255]    [Pg.257]    [Pg.259]    [Pg.261]    [Pg.263]    [Pg.265]    [Pg.264]    [Pg.339]   
See also in sourсe #XX -- [ Pg.87 ]



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