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Photoluminescence spectrum near-band-edge

Figure 1.7 Near-band-edge photoluminescence spectrum of 4H-SIC showing the bound exciton-related luminescence denoted and (where h is the energy in meV of the phonon involved in the transition) and free exciton-related luminescence denoted /. (Data provided by Docent Anne Henry at Linkoping University.)... Figure 1.7 Near-band-edge photoluminescence spectrum of 4H-SIC showing the bound exciton-related luminescence denoted and (where h is the energy in meV of the phonon involved in the transition) and free exciton-related luminescence denoted /. (Data provided by Docent Anne Henry at Linkoping University.)...
The excitation of n-CdS at the band gap (Eg = 2.4 eV) produces a band edge photoluminescence spectrum with a A, ax near 510 nm, which is attributed to the radiative recombination of the photogenerated electrons... [Pg.242]

See other pages where Photoluminescence spectrum near-band-edge is mentioned: [Pg.113]    [Pg.369]    [Pg.161]    [Pg.164]    [Pg.165]    [Pg.29]    [Pg.96]    [Pg.285]    [Pg.205]    [Pg.559]   
See also in sourсe #XX -- [ Pg.10 ]



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