AZ Photoresist

Figure 8. Self developed submicron images produced in a film of poly(p-t-butylphenyl methylsilane) by irradiation at 248 nm (55 mJ/cm -pulse, 550 mJ total dose). The images were transferred into 2.0 /im of a hard baked AZ photoresist by O2-RIE.

Figure 9. 0.75 ixm features generated in a bilayer of 0.2 fxm of poly(cyclohexyl methylsilane) coated over 2.0 fitn of a hard baked AZ photoresist using mid UV projection lithography, 100 mJ/cm ... 

Figure 8. Submicrometer (0.75- ym) features generated in a bilayer of 0,2 fim of poly(cyclohexylmethylsilane) coated over 2.0 xm of a hard-baked AZ photoresist by mid-UV projection lithography (100 mjlcm ). Image transfer was by O2-RIE. (Top photo is reproduced with permission from reference 66. Copyright 1984 Society of Photo-Optical Instrumentation Engineers. Bottom photo is reproduced with permission from reference 63. Copyright 1986 Society of Plastics Engineers.)...

Figure 6. O -RIE etching of poly(cyclohexylmethylsilane) (PCHMS) — A —, and a hardbaked AZ-type photoresist ( — — ) etch conditions 10 mTorr, 40 SCCM, -232V, 110W,...

Figure 8. Bilayer imaging of PCHMS using a PE-500 Microalign 1 1 projection printer (UV-2 mode). 0.16 pm PCHMS over 1.0 pm of a hardbaked AZ-type photoresist. 02-RIE image transfer, 0.75-pm images.

The familiar positive photoresists. Hunt s HPR, Shipley s Microposit, Azoplate s AZ etc., are all two-component, resist systems, consisting of a phenolic resin matrix material and a diazonaphthoquinone sensitizer. The matrix material is essentially inert to photochemistry and was chosen for its film-forming, adhesion, chemical and thermal resistance characteristics. The chemistry of the resist action only occurs in the sensitizer molecule, the diazonaphthoquinone. A detailed description of these materials, their chemical structures and radiation chemistry will be discussed in Section 3.5.b. 

AZ-1350 photoresist was used as a thick bottom layer polymer. AZ resist, thicker than 1.0 was spin-coated on silicon wafer (oxide coated) or substrate with topographic features. The resist was hard-baked for 1 hour at 200 C. SNR film was then spin-coated on a hard-baked AZ resist layer from 5 wt% solution in methylisobutylketone. 

Apart from multi-level layer resist systems, conventional positive-tone resists can be classified into two categories one-component and two-component systems. Classical examples of the former systems are polyfmethyl methacrylate), and poly (butene-1-sulfone) (2,3). Typical examples of the latter system are AZ-type photoresists, which are mixtures of cresol-formaldehyde-Novolak resins and a photoactive compound acting as a dissolution inhibitor... 

In a first step, the negative working photoresist SU-8 is spin-coated on to the disk and soft baked [110]. The disk is then UV-exposed to pattern the bottom layer. A silver thin metal layer is thereafter evaporated. The metal layer is spin-coated with an AZ-type photoresist, dried, exposed and developed. In this way, the metal layer can be developed independently from the patterning of the SU-8 layer underneath. The metal layer is patterned by wet-chemical etching. As a next step, a second SU-8 layer is deposited, soft-baked and exposed. Top and bottom layers are now developed. After a hard bake, a second CaF2 disk is attached to the stack and sealed by a light-curing epoxy resin. 

Glass photoresist (AZ 9260) Treated by CHF3 plasma in a RTF, machine (SU-8) 361... 

Figure 12 shows images created in a bilayer composed of a thin layer of a typical polysilane coated over a thick, hard-baked layer of a typical AZ-type photoresist. After solvent development of the imaged layer, the pattern... 

Figure 12. Electron beam imaging of poly(di-n-pentylsilane) (0.14 ym) coated over 2.0 xm of a hard-baked AZ-type photoresist exposed at 20 iClcm and wet developed. Pattern transfer was by O2-RIE.

Figure 13.36 Resolution capability of AZ HiR 1075 i-line photoresist used in printing line/space features with 1 1.5 pitch. Processing conditions Film thickness 0.66 iJim on 1300A AZ BARLi II BARC, soft bake (proximity) 90°C/60 seconds (proximity). Exposure tool ASML/400 Scanner. Exposure conditions Dose 170 mJ/cm, annular illumination, NA 0.65, partial coherence a (outer/inner) 0.85/0.55. Postexposure bake (proximity) 110°C/90 seconds. Development 2.38% tetramethyl ammonium hydroxide developer/single puddle for 60 seconds at 21.0°C. (Courtesy of R. Dammel. °)...

Figure 13.38 Resolution capability of AZ EXP 2787 DUV 248-nm photoresist used in printing line/space features with a 0.65-NA KrF exciplex laser tool. (Courtesy of R. Dammel. )...

Liu et al. (2012) reported that photoresist effectively covered and insulated noble metal deposited onto a poly-Si layer. Poly-Si was well protected for >80 min in concentrated HF solutions by a 3-pm-thick AZ 6130 photoresist film. 

---