Atmospheric and Low-Pressure Reactors

As shown in Ch. 2, the effect of pressure on the nature of the deposit is considerable. At high pressure (i.e., ca. atmospheric), the deposition is diffusion limited and, at low pressure, surface reaction is the determining factor. In practical terms, this means that low pressure generally provides deposits with greater uniformity, better step coverage, and improved quality. 

Some reactants in atmospheric-pressure reactors must be highly diluted with inert gases to prevent vapor-phase precipitation, while generally no dilution is necessary at low pressure. However, atmospheric pressure reactors are simpler and cheaper. They can operate faster, on a continuous basis and, with recent design improvements, the quality of the deposits has been upgraded considerably and satisfactory deposits of many materials, such as oxides, are obtained. 

Ultra-High Vacuum Reactors. CVD reactions at extremely low pressures (i.e., 10 Torr) are being developed for the deposition of semiconductor materials, such as silicon-germanium and some optoelectronic materials. Advantages appear to be better control of the deposit structure and reduction of impurities. 

Typical Reactor Design. Table 5.1 lists typical CVD production reactors which include cold-wall and hot-wall reactors operating at low or atmospheric pressures. The decision to use a given system should be made after giving due consideration to all the factors of cost, efficiency, production rate, ease of operation, and quality. 

A typical production reactor for the atmospheric deposition of Si02 and boro-phospho-silicate glass is shown in Fig. 5.11. 

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