Application to Materials Science—Ultratrace of Fe Atoms in Si and Dynamic Jumping

3 Application to Materials Science—Ultratrace of Fe Atoms in Si and Dynamic Jumping 

The diffusion mechanisms of dilute Fe atoms in semiconductors are currently one of the most important topics in solid-state physics and related applications. Dilute impurity Fe atoms aregenerallythoughtto occupy only interstitial sites in Si, resulting in rapid diffusion. Fe atoms usually contaminate Si via diffusion annealing and quenching from high temperatures during fabrication of Si wafers. The nature of Fe impurities has been evaluated at low temperatures in such samples. The nature of Fe impurities were then evaluated at low temperature in such samples that must contain differently distributed and/or clustered Fe atoms. 

This experiment is extended to polycrystalline silicon. Polycrystalline silicon is widely used for solar cells, while it contains different lattice defects. This type of experiment is important for improving the generating efficiency to investigate the charge states and the lattice positions of Fe impurities associated with lattice defects produced by light illumination and application of an external voltage. 

3 IN-BEAMMOSSBAUERSPECTROSCOPY USING A RADIOISOTOPE BEAM AND A NEUTRON CAPTURE REACTION 

Mossbauer spectrum of implanted in KMn04 at 11 K. (Reproduced from Ref. 58 with permission of Springer.) 

---