Antiparallel diode

Figure 3.7 Comparison of the turn-on current of an Si ICBT with Si and SiC antiparallel diodes. (From [8]. 2003 Cree, Inc. Permission granted by Cree, Inc.)...

Figure 3.18 Transient current observed in the (a) gate turnoff thyristor and (b) antiparallel diode.

The switching interaction between GTOs and the antiparallel diodes was also investigated. Figure 3.20 shows the following waveforms for a single phase of the inverter circuit lower GTO cathode current upper antiparallel diode current I iupper) anode-cathode voltage of the upper GTO and the upper... 

In the target application, the coolant fluid is Castrol 399 (MIL-PRF-7808) oil at an inlet temperature of 90°C and flowing at 2/3 gpm. As seen in Figure 3.30, the oil enters at the upper left and travels the length of the module from left to right, cooling first the IGBTs and then the associated antiparallel diodes. The oil exits the... 

When eontrolling an a.e. maehine, the eonverter is usually a full-wave, power diode fixed-type reetifier and the Vlf is eontrolled through the IGBT inverter. For regenerative mode, the d.e. bus is eonneeted in antiparallel with a full-wave voltage-eontrolled inverter as shown in Figure 6.31. 

Schottky diodes is that the invention of the very fast Si CoolMOS transistor is helping the introduction of the SiC Schottky diode. The power transistors always have a freewheeling diode in antiparallel, however, there has been no diode fast enough to match these fine Si transistors until the introduction of the SiC Schottky diode. 

The observed I/U characteristics turn towards the behavior of antiparallel Schottky-type double diodes. A complex behavior of the I/U curves upon humidity, may indicate that two mechanisms might play the key role the mobility of H and OH ions within the fullerite lattice at high voltages and electrochemical corrosion of the fullerite in humid environment, which makes the MOSBIT structure like a galvanic battery [4,5]. 

In pulse NMR the use of non-linear elements, usually in the form of crossed diodes, is widespread. Consider a pair of silicon diodes with the diodes antiparallel. 

The centerpiece of this design is a nonhnear, current and voltage dependent impedance, which reproduces a charge transfer resistance and therefore must have a response curve close to the Butler-Vohner equation. This is implemented by two diodes connected antiparallel and a resistor connected in parallel. The resistor s task is to adjust the hnearity. The subcircuit is shown in Fig. 8. This nonhnear element replaces the resistor Rp (Fig. 8) for the foUowing simulations and results. 

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