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Antimonide, gallium indium

Phthalocyanines Copper indium diselenide (CuInSe2) Indium antimonide (InSb) indium phosphide (InP) Indium gallium nitride (InGaN) Cadmium telluride (CdTe)... [Pg.224]

A modern use of antimony is for semiconductors. Most important are gallium, indium and aluminum antimonides, GaSb, InSb and AlSb. [Pg.1022]

Metallic Antimonides. Numerous binary compounds of antimony with metallic elements are known. The most important of these are indium antimonide [1312-41 -0] InSb, gallium antimonide [12064-03-8] GaSb, and aluminum antimonide [25152-52-7] AlSb, which find extensive use as semiconductors. The alkali metal antimonides, such as lithium antimonide [12057-30-6] and sodium antimonide [12058-86-5] do not consist of simple ions. Rather, there is appreciable covalent bonding between the alkali metal and the Sb as well as between pairs of Na atoms. These compounds are useful for the preparation of organoantimony compounds, such as trimethylstibine [594-10-5] (CH2)2Sb, by reaction with an organohalogen compound. [Pg.202]

While most other techniques use a limited amount of detectors (e.g., silica for visible, photomultipliers for UV) and MIR has a small number, NIR uses many types of semiconductors for detectors. The original PbS detectors are still one of the largest used in NIR, however, indium gallium arsenide (InGaAs), indium arsenide (InAs), indium antimonide (InSb), and lead selenide (PbSe) are among the semiconductor combinations used, both cooled and ambient. [Pg.172]

This type of detector is constituted, for the mid-IR region, of a ternary alloy of mercury-cadmium telluride (MCT) or indium antimonide (InSb) deposited upon an inert support and for the near-IR of lead sulfide (PbS) or an other ternary alloy of indium/gallium/arsenic (InGaAs). Sensitivity is improved when these detectors are cooled down to liquid nitrogen temperature of (77 K). [Pg.224]

Mengoli G, Musiani MM, Paolucci F (1991) Synthesis of indium antimonide (InSb) and indium gallium antimonide (In Gai. Sb) thin films from electrodeposited elemental layers. J Appl Electrochem 21 863... [Pg.1947]

Many nomnetaUic elemental molecules (e.g., Clj, F2), as well as molecules containing dissimilar atoms, such as CH4, H2O, HNO3, and HF, are covalently bonded. Furthermore, this type of bonding is found in elemental solids such as diamond (carbon), silicon, and germanium and other solid compounds composed of elements that are located on the right side of the periodic table, such as gallium arsenide (GaAs), indium antimonide (InSb), and sOicon carbide (SiC). [Pg.36]


See other pages where Antimonide, gallium indium is mentioned: [Pg.387]    [Pg.240]    [Pg.199]    [Pg.516]    [Pg.198]    [Pg.199]    [Pg.413]    [Pg.268]    [Pg.14]    [Pg.15]    [Pg.190]    [Pg.19]    [Pg.176]    [Pg.214]    [Pg.268]    [Pg.2]    [Pg.198]    [Pg.660]    [Pg.776]    [Pg.125]    [Pg.197]    [Pg.214]    [Pg.243]   
See also in sourсe #XX -- [ Pg.867 ]




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Antimonide

Gallium antimonide

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