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Annealing process control

SiC is, indeed, a more complicated material than Si, and to understand and control the annealing processes is a major scientific challenge, as illustrated by (but not limited to) the following issues ... [Pg.110]

The final implant annealing process schedule developed during this research is shown in Figure 4.19. A 6-slm UHP Ar flow is first established in the reactor. When the RF generator is turned on, the susceptor is heated to the annealing temperature (typically 1,600°C) using a controlled thermal ramp. To avoid the formation of Si droplets, silane is not introduced into the reactor until a substrate temperature of 1,490°C is reached. At that time the premixed silane in Ar gas is introduced into the Ar carrier flow at a flow rate of 20 seem. All flows are controlled using calibrated... [Pg.134]

In order to characterize the interaction between different clusters, it is necessary to consider the mechanism of cluster identification during the process of the DA algorithm. As the temperature (Tk) is reduced after every iteration, the system undergoes a series of phase transitions (see (18) for details). In this annealing process, at high temperatures that are above a pre-computable critical value, all the lead compounds are located at the centroid of the entire descriptor space, thereby there is only one distinct location for the lead compounds. As the temperature is decreased, a critical temperature value is reached where a phase transition occurs, which results in a greater number of distinct locations for lead compounds and consequently finer clusters are formed. This provides us with a tool to control the number of clusters we want in our final selection. It is shown (18) for a square Euclidean distance d(xi,rj) = x, — rj that a cluster Rj splits at a critical temperature Tc when twice the maximum eigenvalue of the posterior covariance matrix, defined by Cx rj =... [Pg.78]

Phase separation in block copolymer films has been shown to be sensitive to the solvent selectivity and its concentration in the film [49, 51, 114, 120, 123]. We emphasize the importance of a well-controlled atmosphere of solvent vapor for the annealing process since even slight changes in the solvent concentration or in the temperature of the system may induce structural phase transitions. [Pg.45]

Annealing a controlled cooling process for glass designed to reduce residual stress to a commercially acceptable level and to modify structure. [Pg.2516]


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Annealing process

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