Implant annealing process schedule

The final implant annealing process schedule developed during this research is shown in Figure 4.19. A 6-slm UHP Ar flow is first established in the reactor. When the RF generator is turned on, the susceptor is heated to the annealing temperature (typically 1,600°C) using a controlled thermal ramp. To avoid the formation of Si droplets, silane is not introduced into the reactor until a substrate temperature of 1,490°C is reached. At that time the premixed silane in Ar gas is introduced into the Ar carrier flow at a flow rate of 20 seem. All flows are controlled using calibrated... 

Figure 4.19 Implant annealing process schedule indicating gas flow timing versus sample temperature.

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See also in sourсe #XX -- [ ]

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