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Band structure aluminium

Thus, we have a paradox although the band structure of aluminium is nearly-free-electron-like, the actual Fourier components of the crystalline potential are large and negative, not small and positive as required by the NFE model. [Pg.122]

Figure 5.9 Effect on the band structure of doping silicon (i) with phosphorus (ii) and aluminium (Hi)... Figure 5.9 Effect on the band structure of doping silicon (i) with phosphorus (ii) and aluminium (Hi)...
Band Structures of Aluminium Compounds. Aluminium Nitride (AIN). Aluminium nitride is a direct-gap semiconductor. Since it crystallizes in the wurtzite structure, the band structure (Fig. 4.1-66) differs from that of most of the other III-V compounds. [Pg.614]

Aluminium Phosphide (AlP). Aluminium phosphide is an indirect, wide-gap semiconductor. The minima of the conduction bands are located at the X point of the Bril-louin zone. The top of the valence band has the structure common to all zinc blende semiconductors (Fig. 4.1-67). Aluminium Arsenide (AlAs). Aluminium arsenide is a wide-gap semiconductor with a band structure (Fig. 4.1-68) similar to that of AlP. Measurements have revealed a camel s back structure near X. [Pg.614]

I have tried to describe some of the broad principles running through computational physics. They are fairly obvious on the whole, but their intelligent application in each specific project may not be trivial as I know from discussions with collaborators. Computational physics of electronic structure has one vital advantage it stands squarely in the main stream of solid state physics and not on a little ego-trip of its own. This has always been so where would solid state physics be without the band structure calculations on aluminium, silicon or iron at a time when only a few pieces of Fermi surface or symmetry points in k-space were accessible to experiment. The examples I have mentioned and many others in the literature show that it is just as relevant today. [Pg.7]

Fig. tt.1-68 AlAs. Band structure calculated by an orthog- Fig. tt.1-69 Band structure of aluminium antimonide Dualized LCAO method [1.65]... [Pg.616]

Tableir.l-W Effective masses of electrons ( ) and holes (/Wp) for aluminium compounds (in units of the electron mass mo). Aluminium nitride (AIN), calculated values aluminium phosphide (AIP), calculated from band structure aluminium arsenide (AlAs), calculated from band structure data Aluminium antimonide (AlSb), theoretical estimates... Tableir.l-W Effective masses of electrons ( ) and holes (/Wp) for aluminium compounds (in units of the electron mass mo). Aluminium nitride (AIN), calculated values aluminium phosphide (AIP), calculated from band structure aluminium arsenide (AlAs), calculated from band structure data Aluminium antimonide (AlSb), theoretical estimates...
The appearance of the optical absorption bands (Q and B) has a clear threshold at a low non-zero coverage, implying that the electronic structure of the first adsorbed molecules is different from that of the bulk ones. Thus, a clear distinction between molecules directly bonded to the aluminium substrate d- < 0.3 run) and molecules not directly bonded to the substrate d- >0.3 nm) can be made. In the latter case the electronic structure, as revealed by EELS, is identical to that of bulk CuPc, while in the former case modification of the electronic structure prevents transitions toward the LUMO orbital. Above 1.0 nm the Q and B band intensities saturate. The optical transitions are inhibited for molecules directly bonded to the alumiiuum substrate... [Pg.192]

As is seen from the behaviour of the more sophisticated Heine-Abarenkov pseudopotential in Fig. 5.12, the first node q0 in aluminium lies just to the left of (2 / ) / and g = (2n/a)2, the magnitude of the reciprocal lattice vectors that determine the band gaps at L and X respectively. This explains both the positive value and the smallness of the Fourier component of the potential, which we deduced from the observed band gap in eqn (5.45). Taking the equilibrium lattice constant of aluminium to be a = 7.7 au and reading off from Fig. 5.12 that q0 at 0.8(4 / ), we find from eqn (5.57) that the Ashcroft empty core radius for aluminium is Re = 1.2 au. Thus, the ion core occupies only 6% of the bulk atomic volume. Nevertheless, we will find that its strong repulsive influence has a marked effect not only on the equilibrium bond length but also on the crystal structure adopted. [Pg.125]

The main characteristics of the zeolite samples are given in table 1. Their unit cell formula was drawn fium their elemental analysis and from the number of framework aluminium atoms per unit ceU (NaI) estimated from the relationship between the wavenumber of IR structure bands and NA[. Among the zeolite samples, only HFAU4 and 100 and HBEAIO contained a large amount of extraframework aluminium species. [Pg.108]

Similarly, the low frequency overtone at 6950 cm-1 associated with acidic OH vanishes, while the silanol overtone band develops at 7325 cm-1 (9) and the ( v + 6) combination shifts to 4540 cm-1. These observations are consistent with the creation of silicon defects in the structure of dealuminated Y zeolites (10) while the weak overtone band at 7240 cm 1 is probably related to hydroxylated aluminium species extracted from the lattice (11, 12). Thus, the near-IR spectra give evidence for the decrease of the number of Bronsted acid sites as a result of dealumination. [Pg.589]


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