Zinc blende semiconductors

Hutchings DC, Van Stryland EW (1992) Nondegenerate 2-photon absorption in zinc-blend semiconductors. J Opt Soc Am B 9 2065-2074... 

Silicon crystallizes in the diamond structure,16 which consists of two interpenetrating face-centered cubic lattices displaced from each other by one quarter of the body diagonal. In zinc blende semiconductors such as GaAs, the Ga and As atoms lie on separate sublattices, and thus the inversion symmetry of Si is lost in III-V binary compounds. This difference in their crystal structures underlies the disparate electronic properties of Si and GaAs. The energy band structure in... 

Figure 1. (a) Crystal structure and (b) corresponding Brillouin zone for zinc-blende semiconductors. 

Moving around the periodic table, there are systematic variations in the diamond and zinc-blende semiconductor electronic structures. Examples of these systematic variations are shown in Table I. For Ught-element materials, like diamond, in which the distance between atoms is small, the splitting between the bonding and antibonding states is at a maximum. Going down the periodic table, such as for the series C, Si, Ge, and Sn, the elements have a larger lattice... 

It is understood that the D ayakonov-Perel (DP) mechanism is the leading spin R/D mechanism in n-type zinc-blende semiconductors [8]. Many theoretical works have been carried out to study the spin relaxation time in various systems [1,9] based on the single-particle formula [1]... 

Zhang B, Cohen ML (1987) High-pressure phases of 111-V zinc-blende semiconductors. Phys Rev B 35 7604-7610... 

Aluminium Phosphide (AlP). Aluminium phosphide is an indirect, wide-gap semiconductor. The minima of the conduction bands are located at the X point of the Bril-louin zone. The top of the valence band has the structure common to all zinc blende semiconductors (Fig. 4.1-67). Aluminium Arsenide (AlAs). Aluminium arsenide is a wide-gap semiconductor with a band structure (Fig. 4.1-68) similar to that of AlP. Measurements have revealed a camel s back structure near X. 

Gallium Phosphide (GaP). Gallium phosphide is an indirect-gap semiconductor. The lowest set of conduction bands shows a camel s back structure the hand minima are located on the A axes near the zone boundary. The valence hands show the usual stracture characteristic of zinc blende semiconductors. 

Indium Antimonide (InSb). Indium antimonide is a direct-gap semiconductor. The minimum of the conduction band (Fg) is located in the center of the Brillouin zone. Near the minimum, E k) is isotropic but nonparabolic. Thus the effective mass of the electrons is scalar and depends strongly on the electron concentration. Higher band minima (about 0.63 eV above the lowest minimum) seem to have been established by transport measurements in heavily doped n-InSb. The valence band shows the stmcture common to all zinc blende semiconductors, i.e. two subbands degenerate at Fg and one spin-split band at Fy (Fig.4.1-115). 

Hemandez-Cabrera, A., Tjedor, C., and Meseguer, F., Linear electro-otpic effects in zinc blende semiconductors, J. Appl. Phys., 58, 4666 (1985). 

Qieilkowski, J.R. and Cohen, M.L., Nonlocal pseudo calculations for the electronic structure of eleven diamond and zinc-blende semiconductors, Phys. Rev., B 14/2, 559,1976. 

Hint is the optical interaction Hamiltonian given by Hi t=—er-E, where r is the position vector and E is the optical field. c) and v) represent the states in the conduction and valence bands, respectively, and i) is the virtual state within the transparency region. A simple model with a parabolic conduction band and a parabolic valence band gives for zinc blende semiconductors [226]... 

Hutchings, D.C. and van Stryland, E.W. (1992) Nondegenerate two-photon absorption in zinc blende semiconductors. Journal of the Optical Society of America B Optical Physics, 9, 2065. 

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