Advanced Silicon Etching

Cross sectional area Coefficient matrix Chemical species Coefficient matrix Numerical coefficients Advanced silicon etching Internal surface area Attenuated total reflection Numerical coefficient... 

Advanced silicon etching (ASE ) Bosch Vanderbilt University, Nashville, TN, USA process DRIE (Deep reactive ion etching) ... 

The equipment used in the unit operations is complex and microprocessor controlled to allow the execution of process recipes. However, advanced control schemes are rarely invoked. The microprocessor adjusts set points according to some sequence of steps defined by the equipment manufacturer or the process operator. Flows, pressures, and temperatures are regulated independently by off-the-shelf proportional-integral-derivative controllers, even though the control loops interact strongly. For example, fluorine concentration, substrate temperature, reactor pressure, and plasma power all influence silicon etch rates and uniformity, but they are typically controlled independently. 

F. Larmer, A. Schilp, K. Funk, M. Offenberg, Bosch deep silicon etching improving uniformity and etch rate for advanced MEMS applications, Proc. MEMS 99, Orlando, FL, USA, 211-216, Jan. 17-21, 1999. 

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