Wafers with High Dielectric Constant

Characterization of Sol-Gel-Derived and Crystallized Hf02, Zr02, Zr02-Y203 Thin Films on SI(OOI) Wafers with High Dielectric Constant 

Hirofumi Shimizu and Toshikazu Nishide College of Engineering, Nihon University Tamura-machi, Koriyama, Fukushima, 

A very great number of metal oxide thin films are produced by sol-gel methods. Metallic compounds dissolved in organic solvents are hydrolyzed and pwlymeiized by adding H2O with an acid or a base and heating to obtain metal oxide sols. Metal oxide thin films are prepared by coating the sols on substrates followed by firing (Kozuka, 2005). 

Zr02-Y203 Thin Fiims on Si(001) Vtfefers with High Dieiectric Constant 

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Polyimides have been widely used in the advanced microelectronics industry such as passivation or stress-relief layers for high-density electronic packaging, interlayer dielectric layers for wafer-level semiconductor fabrication, or alignment layers for liquid crystals in advanced liquid crystal display devices (LCDs) owing to their outstanding thermal, mechanical and good insulation properties with low dielectric constant, good adhesion to common substrates and superior chemical... 

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