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Vertical Bridgman crystal growth

Figure 1. Schematic diagrams of several commonly used systems for melt crystal growth of electronic materials (a) vertical Bridgman, (b) Czochralski, and (c) small-scale floating-zone systems. Figure 1. Schematic diagrams of several commonly used systems for melt crystal growth of electronic materials (a) vertical Bridgman, (b) Czochralski, and (c) small-scale floating-zone systems.
Figure 3. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman system. Figure 3. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman system.
Figure 2. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman process. From Theory of Transport Processes in Single Crystal Growth from the Melt, by R. A. Brown, AJChE Journal, Vol. 34, No. 6, pp. 881-911, 1988, [29]. Reproduced by permission of the American Institute of Chemical Engineers copyright 1988 AIChE. Figure 2. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman process. From Theory of Transport Processes in Single Crystal Growth from the Melt, by R. A. Brown, AJChE Journal, Vol. 34, No. 6, pp. 881-911, 1988, [29]. Reproduced by permission of the American Institute of Chemical Engineers copyright 1988 AIChE.
The next step is to produce nearly perfect single-crystal boules of silicon from the ultrapure polycrystalline silicon. Many techniques have been developed to accomplish this, and they all rely on a similar set of concepts that describe the transport process, thermodynamically controlled solubility, and kinetics [8]. Three important methods are the vertical Bridgman-Stockbarger, Czochralski, and floating zone processes, fully described in Fundamentals of Crystal Growth by Rosenberger [9]. [Pg.379]

Lan, C. W. (2005), Flow and segregation control by accelerated rotation for vertical Bridgman growth of cadmium zinc telluride ACRT versus vibration, J. Crystal Growth, 274 (3-4), 379-386. [Pg.344]

Local Fe states (using MOssbauer spectroscopy) and thermal expansion coefficient in FeIn2S4 single crystals grown by the directional crystallization of the melt (vertical Bridgman growth) have been studied. [Pg.295]

S. Brandon and J. J. Derby, Internal Radiative Transport in the Vertical Bridgman Growth of Semitransparent Crystals," J. Cryst. Growth, 110, pp. 481-500,1991. [Pg.1476]

Crystal-Growth Technology for Ternary lll-V Semiconductor Production by Vertical Bridgman and Vertical Gradient Freezing Methods with Accelerated Crucible Rotation Technique... [Pg.307]

Fig. 12.19 Growth process for homogeneous GalnSb single crystals by vertical Bridgman method with ACRT and periodic solute-feeding schemes. Fig. 12.19 Growth process for homogeneous GalnSb single crystals by vertical Bridgman method with ACRT and periodic solute-feeding schemes.

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