Vapour Pressure of Precursors

The following table provides useful information on the pressures of commonly used precursor gases. They can be used as a guideline to CVD process design and deposition tank system design. 

Vapour pressure is calculated with Equation (2.70) expressed by 

This is the first part of a table showing the relationship between the temperature and vapour pressure of Si-containing precursors at a pressure of 1, 5, 10, 20 and 40 Torr. The second table Table B.3 on the next page shows the same relationship at a pressure of 60, 100, 200, 400 and 700 Torr. 

This appendix provides useful guidelines on the materials to be deposited and the precursor gases that should be used. As much as psossble, the deposit-precursor gas pairs have been identified and compiled. A comprehensive list of these pairs are provided here for reference purposes. It is intended to be a guideline, and detailed research and investigations on both deposition processes and deposits are required to generate desirable deposit. 

SlXBy SiC14-B2H6-H2, SiC14-BC13-H2 SiB4, SiB6 

---