Ultra large-scale integration circuits

The surface of ultra large-scale integrated circuits (ULSI), from which the heat should be transferred, may be heated by a uniform heat flux, and more often by a non-uniform one. Even in the former case the temperature of the cooled surface is not uniform, but is determined by the heat transfer coefficients along the surface and in the span wise direction. 

As a switching device capable for ultra-large-scale integrated circuits (ULSIs) comprises only one Coulomb island with two leads (electrodes) and a capacitively coupled gate electrode attached to it. This system works as a simple on/off switch and it is often called the SE transistor. Applying a voltage to the outer electrodes of this circuit may either cause sequential transfer of electrons onto and out of the central island or to have no charge transport, i.e. the transistor remains in non-conductive state. The result... 

As indicated above, the goal in recent years in the ultra-large-scale integrated-circuit (ULSI) industry was to reduce contamination on surfaces to below the level detectable with state-of-the-art equipment. For economic and environmental reasons, this had to be replaced by one referred to as just clean enough. This requires that action-reaction-type relationships be identified between contaminants and their influence on a given surface in order to be able to fix acceptable levels of organic and metallic contamination, surface roughness, and other surface characteristics. 

Thin film super-low dielectric constant silica aerogel is investigated for application in ultra-large-scale integrated circuits. It is believed that aerogels could more than double the computer speed [ 11J. Such thin films can be made by using TMOS based solution mixed with dimethyl sulfoxide, and dried with supercritical carbon dioxide after coating. A relative dielectric constant as low as 1.1 can be obtained. 

Yang, D. Chen, J. Ma, X. Que, D. (2009). Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits. Journal Crystal Growth, Vol. 311, No. 3, p p. 837-841, ISSN 0022-0248. 

The miniaturization of microelectronic devices has been progressing rapidly for the last twenty years. For example, the accumulation of integrated circuits in an ultra-large-scale-integration (ULSI) progresses four times per every 3-4 years. (1)... 

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