Thin films device preparation

The successful development of these thin films for device applications requires that two goals be met (1) the preparation of materials with device quality characteristics and (2) for certain applications, successful integration of the thin film with underlying silicon circuitry, without degradation of circuitry performance characteristics. A number of analytical characterization techniques have been employed to study film preparation and thin film—device integration issues. Some of these techniques and their applicability in characterizing ferroelectric thin film device preparation will be briefly discussed. 

Additional polymer thin films, (I), and polymer thin-film devices were prepared by the authors (1) and used as organic solar batteries. 

The first free-flow electrophoresis device (1 ) was designed specifically for large scale biologicals purifications and, although that unit never became fully operational, it preceded a plethora of innovative instruments which either resolved or eliminated the drawbacks inherent in the earliest device. For instance, one apparatus which has been commercially available since the early sixties, the thin-film device (2j is successfully operated at both analytical and preparative scales, e.g. 

Polymers. The Tt-conjugated polymers used in semiconducting appHcations are usually insulating, with semiconducting or metallic properties induced by doping (see Flectrically conductive polymers). Most of the polymers of this type can be prepared by standard methods. The increasing use of polymers in devices in the last decade has led to a great deal of study to improve the processabiUty of thin films of commonly used polymers. 

Polyaniline (PANI) can be formed by electrochemical oxidation of aniline in aqueous acid, or by polymerization of aniline using an aqueous solution of ammonium thiosulfate and hydrochloric acid. This polymer is finding increasing use as a "transparent electrode" in semiconducting devices. To improve processibiHty, a large number of substituted polyanilines have been prepared. The sulfonated form of PANI is water soluble, and can be prepared by treatment of PANI with fuming sulfuric acid (31). A variety of other soluble substituted AJ-alkylsulfonic acid self-doped derivatives have been synthesized that possess moderate conductivity and allow facile preparation of spincoated thin films (32). 

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