Thin-film transistor structure

Figure 16.1 shows typical OFET (or more appropriate thin film transistor) structures. The OFET consists of a gate electrode, a dielectric insulating layer and an organic semiconducting material sandwiched between the source and drain electrodes. 

Figure 16.1 Organic field effect (thin-film) transistor structure with highlighted accumulation of electrons and holes for n- and p-channel semiconductors, respectively...

Figure 10.13. (a) SEM image of ZnO nanorods coated with octylamine. Scale bar, 200 nm. (b) Uniform nanorod film fabricated by spin coating of ZnO nanorods. Scale bar, 500 nm. The nanorods assemble into domains with nematic ordering, (c) Saturated transfer characteristics for a thin-film transistor fabricated by spin coating of ZnO nanorods with different ligands octylamine (solid line), butylamine (dashed line). Vi = 60V. (d) Output characteristics of a spin-coated device made from octylamine-stabilized ZnO nanorods.The device structure is shown in the inset in (c). Reproduced from Ref. 83, Copyright 2006, with permission from the American Chemical Society. 

Figure 12.14. Structure and fabrication process flow of a printed bottom-gated thin-film transistor (TFT).

Fig. 1.3. Schematic view of the structure of organic thin film transistors. Both structures are top-gated, (a) Bottom contact (BC) (b) Top contact (TC).

Thin-film Transistor Device Structures 11.3.2.1 Amorphous Silicon TFTs... 

Fig. 13.1. Schematic structure of the organic thin-film transistor. Starting from the bottom, the transistor consists of the following layers substrate (brown), gate electrode G, (yellow), gate insulator layer (red), the source, S, and drain, D, electrodes (yellow), semiconductor (grey).

D. Knipp, R. A. Street, A. Volkel, J. Ho, Pentacene thin film transistors on inorganic dielectrics Morphology, structural properties, and electronic... 

Figure 5b shows the structure of an organic thin-film transistor. The transistor consists of an organic thin film on top of a gate insulator contacted by metal source and drain electrodes. The gate insulator could be... 

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