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Thick gas

assume that the absorption occurs over a short distance because of large k and that the equilibrium intensity at t may be approximated by its tangent about r (Fig. 10.10), [Pg.519]

we consider the heat flux associated with this gas. Inserting Eq. (1038) into Eq, (8.18) gives [Pg.520]

To find the heat flux resulting from radiating gases with an arbitrary optical thickness, consider the heat flux given by Eqs. (1034) and (10.42) (Fig. 10.11). It can be shown for an arbitrary optical thickness that the heat flux, based on the assumption of isotropic radiation stress (pressure), is [Pg.521]

Details leading to this equation are beyond the scope of this text. Note that the limits of Eq. (10.43) for r — 0 and r oo respectively lead to Eqs. (10.34) and (10.42), as expected. [Pg.521]


The differential density effects are especially related to thick gas reservoirs or highly dipping reservoirs. If we assume that at the gas/water contact a normal pressure exists, as we come up the reservoir or updip, the normal pressure due to the water column decreases more rapidly than the gas pressure. [Pg.1042]

Figure 4-326. Schematic of pressure versus depth for a thick gas formatiot and for a channel communication behind casing. Figure 4-326. Schematic of pressure versus depth for a thick gas formatiot and for a channel communication behind casing.
The texture and drying properties of the paint are important. If it is too thin it will leave the peaks of the matt coating uncovered and if too thick, gas will be trapped in the valleys giving a tendency to blister. In view of the... [Pg.428]

It must be noted that the effective diffusion coefficient (Di)eff is obtained by electrochemical measurements of air gas-diffusion electrodes with sufficiently thick gas layer so that the limiting process is the gas... [Pg.142]

Fig. 7. X-ray diffraction curves for (Ga,Mn)As films obtained with Cu Kor radiation, (a) Mn concentration dependence of peak positions [(004) reflection] of ISO-nm thick (Ga,Mn)As grown on GaAs with compressive strain (Ohno et al. 1996a). (b) (Ga,Mn)As grown on (In.Ga)As buffer layer with tensile strain, (c) Double-crystal x-ray diffraction curves for a 2 /rm-thick (Ga,Mn)As showing the asymmetric (224) reflection with high- and... Fig. 7. X-ray diffraction curves for (Ga,Mn)As films obtained with Cu Kor radiation, (a) Mn concentration dependence of peak positions [(004) reflection] of ISO-nm thick (Ga,Mn)As grown on GaAs with compressive strain (Ohno et al. 1996a). (b) (Ga,Mn)As grown on (In.Ga)As buffer layer with tensile strain, (c) Double-crystal x-ray diffraction curves for a 2 /rm-thick (Ga,Mn)As showing the asymmetric (224) reflection with high- and...
Fig. 9. Magnetic field dependence of the magnetization at selected temperatures for a 150-nm thick Ga xMn As film with a Mn composition x = 0.03S. The magnetic field is applied parallel to the sample surface (direction of magnetic easy axis) except for the closed circles at 5 K taken in perpendicular geometry. The solid line for S K shows the magnetization determined from transport measurements. The upper left inset shows a magnified view of the magnetization in the parallel field at 5 K. The lower right inset shows the temperature dependence of the remanent magnetization (Ohno et al. 1996a). Fig. 9. Magnetic field dependence of the magnetization at selected temperatures for a 150-nm thick Ga xMn As film with a Mn composition x = 0.03S. The magnetic field is applied parallel to the sample surface (direction of magnetic easy axis) except for the closed circles at 5 K taken in perpendicular geometry. The solid line for S K shows the magnetization determined from transport measurements. The upper left inset shows a magnified view of the magnetization in the parallel field at 5 K. The lower right inset shows the temperature dependence of the remanent magnetization (Ohno et al. 1996a).
Fig. II. (a) Temperature dependence of the magnetization for 200-nm thick Ga, MnrAs with x =0.053. The magnetic field is applied perpendicular to the sample surface (hard axis). The inset shows the temperature dependence of the remanent magnetization (0 T) and the magnetization at 1 T in a field parallel to the film surface, (b) Temperature dependence of the saturation magnetization determined from the data shown in (a) by using ArTott plots (closed circles). Open circles show inverse magnetic susceptibility and the Curie-Weiss fit is depicted by the solid straight line (Ohno and Matsukura 2001). Fig. II. (a) Temperature dependence of the magnetization for 200-nm thick Ga, MnrAs with x =0.053. The magnetic field is applied perpendicular to the sample surface (hard axis). The inset shows the temperature dependence of the remanent magnetization (0 T) and the magnetization at 1 T in a field parallel to the film surface, (b) Temperature dependence of the saturation magnetization determined from the data shown in (a) by using ArTott plots (closed circles). Open circles show inverse magnetic susceptibility and the Curie-Weiss fit is depicted by the solid straight line (Ohno and Matsukura 2001).
First note that benzene is primarily moving through the gas-filled pores. Diffusion through the water-filled pores is too slow to account for much of the total flux. To calculate the steady-state diffusive flux through the 3-meter-thick gas-filled pores, use Eq. 18-56 and replace Dipm by diffusivity in the unsaturated zone, Djuz, and ( > by 0g. The latter is the gas-filled void which amounts to 75% of the 40% total porosity. That is, 0 = 0.30. [Pg.821]

In gas-filled windows there are three heat transfer mechanisms conduction and convection through the gas layer and radiation between the surroundings and the glass surfaces. The heat flow by conduction is minimized by using a fairly thick gas layer with a low conductivity. With even thicker layers, the effect of convection becomes important. Conduction and radiation cause similar heat fluxes, with heat transfer coefficients of a few watts per square metre per kelvin. [Pg.47]

Figure 3. Room temperature CER spectra for (a) 7,5-nm thick Gao92lU().o8No.o25Aso..jSbo.o75/C3aAs QW and (b) 7.5-nm thick Ga,i.68lno,32No. Figure 3. Room temperature CER spectra for (a) 7,5-nm thick Gao92lU().o8No.o25Aso..jSbo.o75/C3aAs QW and (b) 7.5-nm thick Ga,i.68lno,32No.<i25Aso.%5Sbo.oi/GaAs QW Right panel - the analysis of the conduction band offset for these QWs. In this case, it is the conduction band offset for unstrained materials, see details in Ref [21],...
The membranes used for analytical pervaporation are hydrophobic membranes of the types usually employed in ultrafiltration and gas-diffusion processes. In practice, PTFE is the most frequently used membrane material, followed by hydrophobic polyvinylidene-fluoride (PVDF). Ultrafiltration membranes are very thin, which, in combination with the large surface area of both the donor and acceptor chamber, leads to their easy bending. This results in changes in the ffux of the permeating component through an altered membrane area and hence in changes in the efficiency of the process. As a result, membranes must be replaced fairly often. Because of their thickness, gas-diffusion membranes are not so easily bent, so the same membrane can be used over long periods. The pore size of the... [Pg.132]

That s what scares me most I thick gas heat is dangerous... too dangerous lor my home, my kids... [Pg.317]

X 20 cm, 1-2 mm thick), gas burner, stand with fixing device, pincette, safety glasses, protective gloves. [Pg.43]

The performance of P EMs can be characterized by either their electrochemical parameters, which include their equivalent weight (EW) and proton conductivity, or by their physical properties, which include thickness, gas permeability, mechanical strength, water uptake, and swelling, and so on. [Pg.338]

Figure 10.11 Radiant heat flux for thin gas, thick gas, and for any optical thickness. Figure 10.11 Radiant heat flux for thin gas, thick gas, and for any optical thickness.
The pressure losses of electric separators in comparison with the other types are very low, ranging between 60 and 250 Pa. A good separation efficiency with saving optimum operation conditions may be achieved in mechanical dry separators as well as wet separators at pressure losses of 600 to 1200 Pa (except for Venturi and slot separators). Considerable pressure losses occur in the filtration layer. Their values depend on the layer porosity , diameter of filtration material fibres, layer thickness, gas dynamic viscosity and the velocity of the streaming gas. [Pg.550]

Fig. 2.13 Trlatomlc gas radiation heat transfer coefficients for 1 to 36 in. (0.3-0.9 m) thick gas blankets with poc having 12% CO2 and 12% H2O (products of a typical natural gas with 10% excess air) at average gas temperatures [(surface + gas) ] of 1400 F to 2400 F (760-1316 C). (Continues on fig. 2.14.)... Fig. 2.13 Trlatomlc gas radiation heat transfer coefficients for 1 to 36 in. (0.3-0.9 m) thick gas blankets with poc having 12% CO2 and 12% H2O (products of a typical natural gas with 10% excess air) at average gas temperatures [(surface + gas) ] of 1400 F to 2400 F (760-1316 C). (Continues on fig. 2.14.)...
Fig. 2.14 Triatomic gas radiation heat transfer coefficients for 36 to 72 in. (0.91-1.83 m) thick gas biankets with poc having 12% CO2 and 12% H2O. The data of figs. 2.13 and 2.14 are for gas blankets of 12% CO2 and 12% H2O, but most natural gases produce about 12 CO2 and 18% H2O, so the actual radiation will be somewhat higher. (Continued from fig. 2.13.)... Fig. 2.14 Triatomic gas radiation heat transfer coefficients for 36 to 72 in. (0.91-1.83 m) thick gas biankets with poc having 12% CO2 and 12% H2O. The data of figs. 2.13 and 2.14 are for gas blankets of 12% CO2 and 12% H2O, but most natural gases produce about 12 CO2 and 18% H2O, so the actual radiation will be somewhat higher. (Continued from fig. 2.13.)...
Step 2. Calculate the added hot gas radiation from the 36 in. thick gas blanket above the top quadrant and the 8 in. wide blanket between the loads. With enhanced heating, the blanket between the loads will be boosted back up to at least the 2250 F temperature assumed for the 36 in. blanket above the loads. [Pg.332]


See other pages where Thick gas is mentioned: [Pg.288]    [Pg.796]    [Pg.83]    [Pg.181]    [Pg.20]    [Pg.26]    [Pg.37]    [Pg.61]    [Pg.248]    [Pg.101]    [Pg.58]    [Pg.329]    [Pg.118]    [Pg.519]    [Pg.519]    [Pg.520]    [Pg.521]    [Pg.232]    [Pg.89]    [Pg.233]    [Pg.408]    [Pg.321]    [Pg.79]    [Pg.145]    [Pg.331]   
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