Thermodynamics, Origin, and Control of Defects

The discussed defects are treated in the classical manner 0-, 1-, 2- and 3-dimensional ones, i.e. point defects, dislocations, grain boundaries and second-phase inclusions. It will be shown which problems are still to be solved, even from a technological point of view. There is insufficient space in this chapter to consider some special defect phenomena, such as twinning and microinhomogeneities (striations). However, the reader can find very instructive papers dealing with these issues by Hurle [3] and Scheel [4], respectively. The consequences of faceting and morphological instability for dopant redistributions are outlined in Ref [1]. 

Crystal Growth Technology. Edited by Hans J. Scheel and Peter Capper 

Copyright 2008 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim ISBN 978-3-527-31762-2 

there is a huge number of theoretical and experimental papers dealing with point defects in semiconductor crystals. Excellent reviews include those by Dornberger [7], Falster and Voronkov [8] for silicon, Wenzl et al. [9] and Hurle [10] for GaAs, and Neumark [11] for II-VI compounds, for example. Erom these itfollows 

In the present chapter a complete treatment of point-defect details in as-grown and annealed crystals is not possible. For this the author refers to the above-mentioned reviews with numerous related references therein. Here, only selected examples, showing their sensitive correlation to the crystallization conditions, will be touched upon. 

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I 3 Thermodynamics, Origin, and Control of Defects Stoich. growth... 

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