Thermal reflow shrink technique

Birkle, Chemical amplification of resist lines a novel sub half micron bilayer resist technique for NUV and deep UV lithography, Proc. SPIE 1262, 528 (1990) M. Sebald, H. Berthold, M. Beyer, R. Leuschner, Ch. Ndlscher, U. Scheler, R. Sezi, H. Ahne, and S. Birkel, Application aspects of the Si CARL bilayer process, Proc. SPIE 1466, 227 237 (1991) R. Leuschner, M. Beyer, H. Bomdorfer, E. Kiihn, Ch. Nolscher, M. Sebald, and R. Sezi, CARL resist A technology for optical quarter micron resolution and below, in Proc. SPE Reg. Tech. Conf. Photopolym., Ellenville, NY, pp. 215 224(1991). 

Okoroanyanwu, Materials and methods for sub lithographic patterning of contact, via, and trench structures in integrated circuit devices, U.S. Patent No. 6,767,693 (2004) U. Okoroanyanwu and A. Acheta Materials and methods for sublithographic patterning of gate structures in integrated circuit devices, U.S. Patent No. 6,884,735 (2005). 

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The postexposure-based techniques are grouped into three broad categories, namely, reflow-based. shrink techniques, chemical-based shrink techniques, and plasma-assisted shrink techniques. The reflow-based shrink techniques comprise thermally induced reflow and electron-beam heating-induced reflow of patterned resist features. The chemical-based shrink techniques comprise those techniques that either increase or decrease the sidewall thickness of already patterned resist features, thus effectively altering their critical dimension. Examples of chemical-based shrink techniques that result in an increase in the sidewall of the patterned features include techniques based on RELACS (resolution enhancement of lithography assisted by chemical shrink) and CARL (chemical amplification of resist lines).Examples of chemical-base shrink techniques that result in decrease... 

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